Datasheet RH1009 (Analog Devices) - 2
| Manufacturer | Analog Devices |
| Description | Radiation Hardened 2.5V Reference |
| Pages / Page | 4 / 2 — TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation). TA = 25. SUB-. 125. … |
| Revision | D |
| File Format / Size | PDF / 329 Kb |
| Document Language | English |
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation). TA = 25. SUB-. 125. SYMBOL PARAMETER. CONDITIONS. NOTES MIN. TYP. MAX GROUP MIN
Model Line for this Datasheet
Text Version of Document
RH1009
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) TA = 25
˚
C SUB-
−
55
˚
C
≤
TA
≤
125
˚
C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
VZ Reverse Breakdown Voltage IR = 1mA 2.495 2.505 1 V �VZ Reverse Breakdown Voltage 400µA ≤ IR ≤ 10mA 6 1 10 2, 3 mV �I Change with Current R rZ Reverse Dynamic IR = 1mA 1 0.6 1 Ω Impedance �VZ Temperature Stability 1 15 mV �VZ Long Term Stability TA = 25˚C±0.1˚C, 20 ppm/kHr �Time IR = 1mA
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 2) 10Krad(Si) 20Krad(Si) 50Krad(Si) 100Krad(Si) 200Krad(Si SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VZ Reverse Breakdown Voltage IR = 1mA 2.495 2.505 2.495 2.505 2.495 2.505 2.495 2.505 2.495 2.505 V �VZ Reverse Breakdown Voltage 400µA ≤ IR ≤ 10mA 6 6 8 10 12 mV �I Change with Current Z rZ Reverse Dynamic IR = 1mA 1 0.6 0.6 0.8 1.0 1.4 Ω Impedance
Note 1:
Guaranteed by design, characterization or correlation to other
Note 2:
TA = 25°C unless otherwise noted. tested parameters.
TOTAL DOSE BIAS CIRCUIT
15V 12.4k RH1009 TDBC
TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUP PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup Final Electrical Test Requirements (Method 5004) 1*, 2, 3, 1, tests after cooldown as the final electrical test in accordance with Group A Test Requirements (Method 5005) 1, 2, 3 method 5004 of MIL-STD-883 Class B. The verified failures (including Group C and D End Point Electrical Parameters 1 Delta parameters) of group A, subgroup 1, after burn-in divided by the (Method 5005) total number of devices submitted for burn-in in that lot shall be used to *PDA Applies to subgroup 1. See PDA Test Notes. determine the percent for the lot. Analog Devices reserves the right to test to tighter limits than those given. I.D.No.66-10-0174 Rev. D 2 For more information www.analog.com Document Outline Description Burn-In Circuit Absolute Maximum Ratings Package/Order Information Table 1: Electrical Characteristics Table 1A: Electrical Characteristics Total Dose Bias Circuit Table 2: Electrical Test Requirements Revision History Typical Performance Characteristics
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) TA = 25
˚
C SUB-
−
55
˚
C
≤
TA
≤
125
˚
C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
VZ Reverse Breakdown Voltage IR = 1mA 2.495 2.505 1 V �VZ Reverse Breakdown Voltage 400µA ≤ IR ≤ 10mA 6 1 10 2, 3 mV �I Change with Current R rZ Reverse Dynamic IR = 1mA 1 0.6 1 Ω Impedance �VZ Temperature Stability 1 15 mV �VZ Long Term Stability TA = 25˚C±0.1˚C, 20 ppm/kHr �Time IR = 1mA
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 2) 10Krad(Si) 20Krad(Si) 50Krad(Si) 100Krad(Si) 200Krad(Si SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VZ Reverse Breakdown Voltage IR = 1mA 2.495 2.505 2.495 2.505 2.495 2.505 2.495 2.505 2.495 2.505 V �VZ Reverse Breakdown Voltage 400µA ≤ IR ≤ 10mA 6 6 8 10 12 mV �I Change with Current Z rZ Reverse Dynamic IR = 1mA 1 0.6 0.6 0.8 1.0 1.4 Ω Impedance
Note 1:
Guaranteed by design, characterization or correlation to other
Note 2:
TA = 25°C unless otherwise noted. tested parameters.
TOTAL DOSE BIAS CIRCUIT
15V 12.4k RH1009 TDBC
TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUP PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup Final Electrical Test Requirements (Method 5004) 1*, 2, 3, 1, tests after cooldown as the final electrical test in accordance with Group A Test Requirements (Method 5005) 1, 2, 3 method 5004 of MIL-STD-883 Class B. The verified failures (including Group C and D End Point Electrical Parameters 1 Delta parameters) of group A, subgroup 1, after burn-in divided by the (Method 5005) total number of devices submitted for burn-in in that lot shall be used to *PDA Applies to subgroup 1. See PDA Test Notes. determine the percent for the lot. Analog Devices reserves the right to test to tighter limits than those given. I.D.No.66-10-0174 Rev. D 2 For more information www.analog.com Document Outline Description Burn-In Circuit Absolute Maximum Ratings Package/Order Information Table 1: Electrical Characteristics Table 1A: Electrical Characteristics Total Dose Bias Circuit Table 2: Electrical Test Requirements Revision History Typical Performance Characteristics
