Datasheet Si2312CDS (Vishay) - 2
| Manufacturer | Vishay |
| Description | N-Channel 20 V (D-S) MOSFET |
| Pages / Page | 10 / 2 — Si2312CDS. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. TYP. … |
| File Format / Size | PDF / 239 Kb |
| Document Language | English |
Si2312CDS. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. TYP. MAX. UNIT. Static. Dynamic b
Model Line for this Datasheet
Text Version of Document
Si2312CDS
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 20 - - V VDS temperature coefficient VDS/TJ - 25 - ID = 250 μA mV/°C VGS(th) temperature coefficient VGS(th)/TJ - -2.6 - Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 0.45 - 1 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA VDS = 20 V, VGS = 0 V - - 1 Zero gate voltage drain current IDSS μA VDS = 20 V, VGS = 0 V, TJ = 70 °C - - 10 On-state drain current a I D(on) VDS 5 V, VGS = 4.5 V 20 - - A VGS = 4.5 V, ID = 5 A - 0.0265 0.0318 Drain-source on-state resistance a R VGS = 2.5 V, ID = 4.7 A - 0.0296 0.0356 DS(on) VGS = 1.8 V, ID = 4.3 A - 0.0345 0.0414 Forward transconductance a gfs VDS = 10 V, ID = 5 A - 24 - S
Dynamic b
Input capacitance Ciss - 865 - Output capacitance C V oss DS = 10 V, VGS = 0 V, f = 1 MHz - 105 - pF Reverse transfer capacitance Crss - 55 - VDS = 10 V, VGS = 5 V, ID = 5 A - 12 18 Total gate charge Qg - 8.8 14 nC Gate-source charge Q V gs DS = 10 V, VGS = 4.5 V, ID = 5 A - 1.1 - Gate-drain charge Qgd - 0.7 - Gate resistance Rg f = 1 MHz 0.5 2.4 4.8 Turn-on delay time td(on) - 8 16 Rise time tr V - 17 26 DD = 10 V, RL = 2.2 I Turn-off delay time t D 4 A, VGEN = 4.5 V, Rg = 1 d(off) - 31 47 Fall time tf - 8 16 ns Turn-on delay time td(on) - 5 10 Rise time tr V - 13 20 DD = 10 V, RL = 2.2 I Turn-off delay time t D 4 A, VGEN = 5 V, Rg = 1 d(off) - 21 32 Fall time tf - 6 12
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS TC = 25 °C - - 1.75 A Pulse diode forward current ISM - - 20 Body diode voltage VSD IS = 4 A, VGS = 0 V - 0.75 1.2 V Body diode reverse recovery time trr - 12 20 ns Body diode reverse recovery charge Qrr I - 5 10 nC F = 4 A, di/dt = 100 A/μs, T Reverse recovery fall time t J = 25 °C a - 7 - ns Reverse recovery rise time tb - 5 -
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S10-0641-Rev. A, 22-Mar-10
2
Document Number: 65900 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 20 - - V VDS temperature coefficient VDS/TJ - 25 - ID = 250 μA mV/°C VGS(th) temperature coefficient VGS(th)/TJ - -2.6 - Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 0.45 - 1 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA VDS = 20 V, VGS = 0 V - - 1 Zero gate voltage drain current IDSS μA VDS = 20 V, VGS = 0 V, TJ = 70 °C - - 10 On-state drain current a I D(on) VDS 5 V, VGS = 4.5 V 20 - - A VGS = 4.5 V, ID = 5 A - 0.0265 0.0318 Drain-source on-state resistance a R VGS = 2.5 V, ID = 4.7 A - 0.0296 0.0356 DS(on) VGS = 1.8 V, ID = 4.3 A - 0.0345 0.0414 Forward transconductance a gfs VDS = 10 V, ID = 5 A - 24 - S
Dynamic b
Input capacitance Ciss - 865 - Output capacitance C V oss DS = 10 V, VGS = 0 V, f = 1 MHz - 105 - pF Reverse transfer capacitance Crss - 55 - VDS = 10 V, VGS = 5 V, ID = 5 A - 12 18 Total gate charge Qg - 8.8 14 nC Gate-source charge Q V gs DS = 10 V, VGS = 4.5 V, ID = 5 A - 1.1 - Gate-drain charge Qgd - 0.7 - Gate resistance Rg f = 1 MHz 0.5 2.4 4.8 Turn-on delay time td(on) - 8 16 Rise time tr V - 17 26 DD = 10 V, RL = 2.2 I Turn-off delay time t D 4 A, VGEN = 4.5 V, Rg = 1 d(off) - 31 47 Fall time tf - 8 16 ns Turn-on delay time td(on) - 5 10 Rise time tr V - 13 20 DD = 10 V, RL = 2.2 I Turn-off delay time t D 4 A, VGEN = 5 V, Rg = 1 d(off) - 21 32 Fall time tf - 6 12
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS TC = 25 °C - - 1.75 A Pulse diode forward current ISM - - 20 Body diode voltage VSD IS = 4 A, VGS = 0 V - 0.75 1.2 V Body diode reverse recovery time trr - 12 20 ns Body diode reverse recovery charge Qrr I - 5 10 nC F = 4 A, di/dt = 100 A/μs, T Reverse recovery fall time t J = 25 °C a - 7 - ns Reverse recovery rise time tb - 5 -
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S10-0641-Rev. A, 22-Mar-10
2
Document Number: 65900 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
