Datasheet TSSP960 (Vishay) - 2

TSSP960..
www.vishay.com Vishay Semiconductors
BLOCK DIAGRAM PRESENCE SENSING
3 +3 V V IR emitter S 33 kΩ 4 Envelope OUT signal Band Demo - Input AMP pass dulator 38 kHz +3 V 1 PIN GND Out to μC 16839-4
ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Supply voltage VS -0.3 to +3.6 V Supply current IS 5 mA Output voltage VO -0.3 to +3.6 V Output current IO 5 mA Junction temperature Tj 100 °C Storage temperature range Tstg -25 to +85 °C Operating temperature range Tamb -25 to +85 °C Power consumption Tamb ≤ 85 °C Ptot 10 mW
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability
ELECTRICAL AND OPTICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Ev = 0, VS = 5 V ISD 0.25 0.37 0.45 mA Supply current (pin 3) Ev = 40 klx, sunlight ISH - 0.8 - mA Supply voltage VS 2.0 - 3.6 V E Transmission distance v = 0, test signal see Fig. 1, d - 8 - m IR diode TSAL6200, IF = 50 mA I Output voltage low (pin 1) OSL = 0.5 mA, Ee = 2 mW/m2, V test signal see Fig. 1 OSL - - 100 mV Pulse width tolerance: Minimum irradiance tpi - 5/fo < tpo < tpi + 6/fo, Ee min. - 0.7 1.2 mW/m2 test signal see Fig. 1 t Maximum irradiance pi - 5/fo < tpo < tpi + 6/fo, E test signal see Fig. 1 e max. 30 - - W/m2 Angle of half transmission Directivity ϕ 50 - ° distance 1/2 - ± Rev. 1.1, 17-Apr-2019
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Document Number: 82868 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000