Datasheet TCKE805 (Toshiba)
Manufacturer | Toshiba |
Description | CMOS Linear Integrated Circuit Silicon Monolithic. 18 V, 5A eFuse IC with Adjustable Over Current Protection and Reverse Blocking FET Control |
Pages / Page | 22 / 1 — TCKE805 Series. 18 V, 5A eFuse IC with Adjustable Over Current Protection … |
File Format / Size | PDF / 996 Kb |
Document Language | English |
TCKE805 Series. 18 V, 5A eFuse IC with Adjustable Over Current Protection and Reverse. Blocking FET Control. Feature. Notice
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Text Version of Document
TCKE805 Series
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCKE805 Series 18 V, 5A eFuse IC with Adjustable Over Current Protection and Reverse Blocking FET Control
The TCKE805 series are 18 V high input voltage Single Inputs- Single Output eFuse IC. It can be used as a reusable fuse, and includes protection features like adjustable over current limit by an external resistor, short circuit protection, over voltage clamp, adjustable slew rete control by an external capacitance, under voltage protection, thermal shutdown and reverse current blocking by external MOSFET control circuit. Switch ON resistance is only 28 mΩ, high output current is up to 5.0A, and wide input voltage operation characteristics makes this product ideal for power management applications such as in the power supply circuit of hard disk drive and battery charging applications. This device is available in 0.4mm pitch small package WSON10B WSON10B (3.0 mm x 3.0 mm, t: 0.7 mm (typ)). Thus this devices is ideal for various applications such as portable electronics that require Weight : 19.3mg ( typ.) high-density boards.
Feature
• High input voltage: VIN max = 18.0 V • High output current: IOUT (DC) = 5.0 A • Low ON resistance : RON = 28 mΩ (typ.) • Adjustable overcurrent limit : up to 5.0 A • Fixed over voltage clamp 5V power rail : 6.04 V (typ.) • Programmable slew rate control by external capacitance for Inrush current reduction • Programmable under voltage lockout by external resistor • Reverse current blocking support by built in MOSFET Driver • Adjustable under voltage lockout(UVLO) by external resistor • Thermal shutdown • Auto-discharge • Small package: WSON10B (3.0 mm x 3.0 mm, t: 0.7 mm (typ))
Notice
This device is sensitive to electrostatic discharge. Please ensure equipment and tools are adequately earthed when handling. Start of commercial production 2019-11 1 2019-11-8 © 2019 Toshiba Electronic Devices & Storage Corporation