Datasheet MTD20P06HDL (Motorola) - 2
| Manufacturer | Motorola |
| Description | P–Channel Enhancement–Mode Silicon Gate |
| Pages / Page | 12 / 2 — ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. … |
| File Format / Size | PDF / 318 Kb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS (1)
Model Line for this Datasheet
Text Version of Document
MTD20P06HDL
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain–Source Breakdown Voltage V(BR)DSS Vdc (VGS = 0 Vdc, ID = 250 µAdc) 60 — — Temperature Coefficient (Positive) — 81.3 — mV/°C Zero Gate Voltage Drain Current IDSS µAdc (VDS = 60 Vdc, VGS = 0 Vdc) — — 1.0 (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C) — — 10 Gate–Body Leakage Current (VGS = ±15 Vdc, VDS = 0) IGSS — — 100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage VGS(th) Vdc (VDS = VGS, ID = 250 µAdc) 1.0 1.7 2.0 Temperature Coefficient (Negative) — 3.9 — mV/°C Static Drain–Source On–Resistance RDS(on) — 143 175 mΩ (VGS = 5.0 Vdc, ID = 7.5 Adc) Drain–Source On–Voltage (VGS = 5.0 Vdc) VDS(on) Vdc (ID = 15 Adc) — 2.3 3.0 (ID = 7.5 Adc, TJ = 125°C) — 1.6 2.0 Forward Transconductance (VDS = 10 Vdc, ID = 7.5 Adc) gFS 9.0 11 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss — 850 1190 pF (VD (V S = 25 Vdc, V S G = 25 Vdc, V S = 0 Vdc, Output Capacitance S C f = 1.0 MHz) oss — 210 290 f = 1.0 MHz) Reverse Transfer Capacitance Crss — 66 130
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time td(on) — 19 38 ns (V Rise Time D (V S = 30 Vdc, I S D = 30 Vdc, I = 15 Adc, D tr — 175 350 VG V S = 5.0 Vdc, S Turn–Off Delay Time RG = 9.1 G Ω = 9.1 ) Ω t Ω) d(off) — 41 82 Fall Time tf — 68 136 Gate Charge QT — 20.6 29 nC (V Q D (V S = 48 Vdc, I S D = 48 Vdc, I = 15 Adc, D 1 — 3.7 — (VDS = 48 Vdc, ID = 15 Adc, VG V S = 5.0 Vdc) S Q2 — 7.6 — Q3 — 8.4 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage V Vdc (I SD S = 15 Adc, VGS = 0 Vdc) — 2.5 3.0 (IS = 15 Adc, VGS = 0 Vdc, TJ = 125°C) — 1.9 — Reverse Recovery Time trr — 64 — ns (I t S (I = 15 Adc, V S G = 15 Adc, V S = 0 Vdc, S a — 50 — (IS = 15 Adc, VGS = 0 Vdc, dIS dI /dt = 100 A/ S µ /dt = 100 A/ s) µ tb — 14 — Reverse Recovery Stored Charge QRR — 0.177 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD — 4.5 — nH (Measured from the drain lead 0.25″ from package to center of die) Internal Source Inductance LS — 7.5 — nH (Measured from the source lead 0.25″ from package to source bond pad) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain–Source Breakdown Voltage V(BR)DSS Vdc (VGS = 0 Vdc, ID = 250 µAdc) 60 — — Temperature Coefficient (Positive) — 81.3 — mV/°C Zero Gate Voltage Drain Current IDSS µAdc (VDS = 60 Vdc, VGS = 0 Vdc) — — 1.0 (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C) — — 10 Gate–Body Leakage Current (VGS = ±15 Vdc, VDS = 0) IGSS — — 100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage VGS(th) Vdc (VDS = VGS, ID = 250 µAdc) 1.0 1.7 2.0 Temperature Coefficient (Negative) — 3.9 — mV/°C Static Drain–Source On–Resistance RDS(on) — 143 175 mΩ (VGS = 5.0 Vdc, ID = 7.5 Adc) Drain–Source On–Voltage (VGS = 5.0 Vdc) VDS(on) Vdc (ID = 15 Adc) — 2.3 3.0 (ID = 7.5 Adc, TJ = 125°C) — 1.6 2.0 Forward Transconductance (VDS = 10 Vdc, ID = 7.5 Adc) gFS 9.0 11 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss — 850 1190 pF (VD (V S = 25 Vdc, V S G = 25 Vdc, V S = 0 Vdc, Output Capacitance S C f = 1.0 MHz) oss — 210 290 f = 1.0 MHz) Reverse Transfer Capacitance Crss — 66 130
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time td(on) — 19 38 ns (V Rise Time D (V S = 30 Vdc, I S D = 30 Vdc, I = 15 Adc, D tr — 175 350 VG V S = 5.0 Vdc, S Turn–Off Delay Time RG = 9.1 G Ω = 9.1 ) Ω t Ω) d(off) — 41 82 Fall Time tf — 68 136 Gate Charge QT — 20.6 29 nC (V Q D (V S = 48 Vdc, I S D = 48 Vdc, I = 15 Adc, D 1 — 3.7 — (VDS = 48 Vdc, ID = 15 Adc, VG V S = 5.0 Vdc) S Q2 — 7.6 — Q3 — 8.4 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage V Vdc (I SD S = 15 Adc, VGS = 0 Vdc) — 2.5 3.0 (IS = 15 Adc, VGS = 0 Vdc, TJ = 125°C) — 1.9 — Reverse Recovery Time trr — 64 — ns (I t S (I = 15 Adc, V S G = 15 Adc, V S = 0 Vdc, S a — 50 — (IS = 15 Adc, VGS = 0 Vdc, dIS dI /dt = 100 A/ S µ /dt = 100 A/ s) µ tb — 14 — Reverse Recovery Stored Charge QRR — 0.177 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD — 4.5 — nH (Measured from the drain lead 0.25″ from package to center of die) Internal Source Inductance LS — 7.5 — nH (Measured from the source lead 0.25″ from package to source bond pad) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data
