Datasheet SiSF20DN (Vishay) - 2
| Manufacturer | Vishay |
| Description | Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET |
| Pages / Page | 8 / 2 — SiSF20DN. SPECIFICATIONS. PARAMETER. SYMBOL TEST. CONDITIONS MIN. TYP. … |
| File Format / Size | PDF / 213 Kb |
| Document Language | English |
SiSF20DN. SPECIFICATIONS. PARAMETER. SYMBOL TEST. CONDITIONS MIN. TYP. MAX. UNIT. Static. Dynamic b, c
Model Line for this Datasheet
Text Version of Document
SiSF20DN
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 60 - - V Gate-source threshold voltage VGS(th) VS1S2 = VGS, ID = 250 μA 1 - 3 Gate-source leakage IGSS VS1S2 = 0 V, VGS = ± 20 V - - ± 100 nA VS1S2 = 60 V, VGS = 0 V - - 1 Zero gate voltage drain current IDSS μA VS1S2 = 60 V, VGS = 0 V, TJ = 70 °C - - 15 On-state drain current a IS1S2(on) VS1S2 10 V, VGS = 10 V 20 - - A VGS = 10 V, IS1S2 = 7 A - 0.0100 0.0130 Drain-source on-state resistance a R S1S2(on) VGS = 4.5 V, IS1S2 = 5 A - 0.0140 0.0185 Forward transconductance a gfs VS1S2 = 10 V, IS1S2 = 25 A - 75 - S
Dynamic b, c
Input capacitance Ciss - 1290 - Output capacitance C V oss DS = 30 V, VGS = 0 V, f = 1 MHz - 340 - pF Reverse transfer capacitance Crss - 8 - VDS = 30 V, VGS = 10 V, ID =5 A - 22 33 Total gate charge Qg - 10.2 16 nC Gate-source charge Q V gs DS = 30 V, VGS = 4.5 V, ID = 5 A - 3.9 - Gate-drain charge Qgd - 2.9 - Gate resistance Rg f = 1 MHz 0.14 0.7 1.4 Turn-on delay time td(on) - 10 20 Rise time tr V - 5 10 DD = 30 V, RL = 6 , IS1S2 5 A, V Turn-off delay time t GEN = 10 V, Rg = 1 d(off) - 19 40 Fall time tf - 5 10 ns Turn-on delay time td(on) - 15 30 Rise time tr V - 50 100 DD = 30 V, RL = 6 , ID 5 A, V Turn-off delay time t GEN = 4.5 V, Rg = 1 d(off) - 24 50 Fall time tf - 7 15
Drain-Source Body Diode Characteristics c
Continuous source-drain diode current IS1S2 TC = 25 °C - - 52 A Pulse diode forward current IS1S2M - - 100 Body diode reverse recovery time trr - 30 60 ns Body diode reverse recovery charge Qrr I - 18 35 nC F = 5 A, di/dt = 100 A/μs, T Reverse recovery fall time t J = 25 °C a - 15 - ns Reverse recovery rise time tb - 15 -
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. On single MOSFET Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-1210-Rev. A, 10-Dec-2018
2
Document Number: 76915 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 60 - - V Gate-source threshold voltage VGS(th) VS1S2 = VGS, ID = 250 μA 1 - 3 Gate-source leakage IGSS VS1S2 = 0 V, VGS = ± 20 V - - ± 100 nA VS1S2 = 60 V, VGS = 0 V - - 1 Zero gate voltage drain current IDSS μA VS1S2 = 60 V, VGS = 0 V, TJ = 70 °C - - 15 On-state drain current a IS1S2(on) VS1S2 10 V, VGS = 10 V 20 - - A VGS = 10 V, IS1S2 = 7 A - 0.0100 0.0130 Drain-source on-state resistance a R S1S2(on) VGS = 4.5 V, IS1S2 = 5 A - 0.0140 0.0185 Forward transconductance a gfs VS1S2 = 10 V, IS1S2 = 25 A - 75 - S
Dynamic b, c
Input capacitance Ciss - 1290 - Output capacitance C V oss DS = 30 V, VGS = 0 V, f = 1 MHz - 340 - pF Reverse transfer capacitance Crss - 8 - VDS = 30 V, VGS = 10 V, ID =5 A - 22 33 Total gate charge Qg - 10.2 16 nC Gate-source charge Q V gs DS = 30 V, VGS = 4.5 V, ID = 5 A - 3.9 - Gate-drain charge Qgd - 2.9 - Gate resistance Rg f = 1 MHz 0.14 0.7 1.4 Turn-on delay time td(on) - 10 20 Rise time tr V - 5 10 DD = 30 V, RL = 6 , IS1S2 5 A, V Turn-off delay time t GEN = 10 V, Rg = 1 d(off) - 19 40 Fall time tf - 5 10 ns Turn-on delay time td(on) - 15 30 Rise time tr V - 50 100 DD = 30 V, RL = 6 , ID 5 A, V Turn-off delay time t GEN = 4.5 V, Rg = 1 d(off) - 24 50 Fall time tf - 7 15
Drain-Source Body Diode Characteristics c
Continuous source-drain diode current IS1S2 TC = 25 °C - - 52 A Pulse diode forward current IS1S2M - - 100 Body diode reverse recovery time trr - 30 60 ns Body diode reverse recovery charge Qrr I - 18 35 nC F = 5 A, di/dt = 100 A/μs, T Reverse recovery fall time t J = 25 °C a - 15 - ns Reverse recovery rise time tb - 15 -
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. On single MOSFET Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-1210-Rev. A, 10-Dec-2018
2
Document Number: 76915 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
