Datasheet SiSF20DN (Vishay) - 4
| Manufacturer | Vishay |
| Description | Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET |
| Pages / Page | 8 / 4 — SiSF20DN. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. … |
| File Format / Size | PDF / 213 Kb |
| Document Language | English |
SiSF20DN. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. Threshold Voltage
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Text Version of Document
SiSF20DN
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 1.8 10000 1.6 ) 10 T = 150 °C J (A 1000 1000 ine ) V 1.4 rrent I = 250 μA D u ne ne 2nd l -( ne ne 1 ) ine T = 25 °C (th J 1st li 2nd li GS 1st li 2nd li V 1.2 2nd l ource C S 100 100 - 0.1 1.0 I FS1S2 0.01 10 0.8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150 V - Source-to-Source Voltage (V) T - Junction Temperature (°C) FS1S2 J
Source-Drain Diode Forward Voltage Threshold Voltage
Axis Title Axis Title 0.08 10000 80 10000 ) Ω 0.06 60 1000 ) 1000 (W ine ne ne ine ne ne er 0.04 40 ow 2nd l n-Resistance ( 1st li 2nd li P 1st li O 2nd l 2nd li - - ) n T = 125 °C 100 P 100 J 0.02 20 S1S2(oR T = 25 °C J 0 10 0 10 0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 1000 V - Gate-to-Source Voltage (V) GS t - Time (s)
On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient
S18-1210-Rev. A, 10-Dec-2018
4
Document Number: 76915 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 1.8 10000 1.6 ) 10 T = 150 °C J (A 1000 1000 ine ) V 1.4 rrent I = 250 μA D u ne ne 2nd l -( ne ne 1 ) ine T = 25 °C (th J 1st li 2nd li GS 1st li 2nd li V 1.2 2nd l ource C S 100 100 - 0.1 1.0 I FS1S2 0.01 10 0.8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150 V - Source-to-Source Voltage (V) T - Junction Temperature (°C) FS1S2 J
Source-Drain Diode Forward Voltage Threshold Voltage
Axis Title Axis Title 0.08 10000 80 10000 ) Ω 0.06 60 1000 ) 1000 (W ine ne ne ine ne ne er 0.04 40 ow 2nd l n-Resistance ( 1st li 2nd li P 1st li O 2nd l 2nd li - - ) n T = 125 °C 100 P 100 J 0.02 20 S1S2(oR T = 25 °C J 0 10 0 10 0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 1000 V - Gate-to-Source Voltage (V) GS t - Time (s)
On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient
S18-1210-Rev. A, 10-Dec-2018
4
Document Number: 76915 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
