Datasheet IRLHM620PbF (Infineon)
| Manufacturer | Infineon |
| Description | HEXFET Power MOSFET |
| Pages / Page | 9 / 1 — VDSS. VGS. RDS(on) max. 2.5. 3.5. Qg (typical). (@TC (Bottom) = 25°C). … |
| File Format / Size | PDF / 542 Kb |
| Document Language | English |
VDSS. VGS. RDS(on) max. 2.5. 3.5. Qg (typical). (@TC (Bottom) = 25°C). Applications. Features. Benefits. Standard Pack. Orderable part number
Model Line for this Datasheet
Text Version of Document
IRLHM620PbF HEXFET® Power MOSFET
VDSS 20 V
VGS
±
12 V RDS(on) max
(@ VGS = 4.5V)
2.5 m
(@ VGS = 2.5V)
3.5 Qg (typical) 52 nC ID
PQFN 3.3 x 3.3 mm
(@TC (Bottom) = 25°C) 40
A Applications
Battery Operated DC Motor Inverter MOSFET Secondary Side Synchronous Rectification MOSFET
Features Benefits
Low RDSon (< 2.5m) Lower Conduction Losses Low Thermal Resistance to PCB (<3.4°C/W) Enable better thermal dissipation Low Profile (< 1.0 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability
Standard Pack Orderable part number Package Type Note Form Quantity
IRLHM620TRPbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 IRLHM620TR2PBF PQFN 3.3mm x 3.3mm Tape and Reel 400 EOL notice # 259
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 20 V VGS Gate-to-Source Voltage ± 12 ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 26 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 21 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 4.5V 40 A ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 4.5V 40 IDM Pulsed Drain Current 160 PD @TA = 25°C Power Dissipation 2.7 W PD @TC(Bottom) = 25°C Power Dissipation 37 Linear Derating Factor 0.022 W/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Notes through are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback September 25, 2015
VDSS 20 V
VGS
±
12 V RDS(on) max
(@ VGS = 4.5V)
2.5 m
(@ VGS = 2.5V)
3.5 Qg (typical) 52 nC ID
PQFN 3.3 x 3.3 mm
(@TC (Bottom) = 25°C) 40
A Applications
Battery Operated DC Motor Inverter MOSFET Secondary Side Synchronous Rectification MOSFET
Features Benefits
Low RDSon (< 2.5m) Lower Conduction Losses Low Thermal Resistance to PCB (<3.4°C/W) Enable better thermal dissipation Low Profile (< 1.0 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability
Standard Pack Orderable part number Package Type Note Form Quantity
IRLHM620TRPbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 IRLHM620TR2PBF PQFN 3.3mm x 3.3mm Tape and Reel 400 EOL notice # 259
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 20 V VGS Gate-to-Source Voltage ± 12 ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 26 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 21 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 4.5V 40 A ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 4.5V 40 IDM Pulsed Drain Current 160 PD @TA = 25°C Power Dissipation 2.7 W PD @TC(Bottom) = 25°C Power Dissipation 37 Linear Derating Factor 0.022 W/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Notes through are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback September 25, 2015
