Datasheet Si2399DS (Vishay) - 4
| Manufacturer | Vishay |
| Description | P-Channel 20-V (D-S) MOSFET |
| Pages / Page | 10 / 4 — Si2399DS. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. … |
| File Format / Size | PDF / 214 Kb |
| Document Language | English |
Si2399DS. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage
Model Line for this Datasheet
Text Version of Document
Si2399DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 0.08 I = 5.1 A D 10 0.06 ) (A T = 150 °C J rrent u 0.04 T = 25 °C J -Resistance (Ω) n O ource C 1 - S T = 25 °C J ) - n o I S T = 125 °C DS( J 0.02 R 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 V - Source-to-Drain Voltage (V) SD V - Gate-to-Source Voltage (V) GS
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
1.1 10 8 1.0 ) 6 (V W I = 250 μA D (th) 0.8 er ( GS w V Po 4 0.7 2 TA = 25 °C 0.5 0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 T - Temperature (°C) Time (s) J
Threshold Voltage Single Pulse Power
100 Limited by R * DS(on) 10 ) 100 μs (A rrent u 1 ms 1 C n 10 ms rai D - I D 100 ms 0.1 1 s, 10 s DC T = 25 °C BVDSS Limited C Single Pulse 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified GS GS DS(on)
Safe Operating Area
www.vishay.com Document Number: 67343 4 S11-0239-Rev. A, 14-Feb-11
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 0.08 I = 5.1 A D 10 0.06 ) (A T = 150 °C J rrent u 0.04 T = 25 °C J -Resistance (Ω) n O ource C 1 - S T = 25 °C J ) - n o I S T = 125 °C DS( J 0.02 R 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 V - Source-to-Drain Voltage (V) SD V - Gate-to-Source Voltage (V) GS
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
1.1 10 8 1.0 ) 6 (V W I = 250 μA D (th) 0.8 er ( GS w V Po 4 0.7 2 TA = 25 °C 0.5 0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 T - Temperature (°C) Time (s) J
Threshold Voltage Single Pulse Power
100 Limited by R * DS(on) 10 ) 100 μs (A rrent u 1 ms 1 C n 10 ms rai D - I D 100 ms 0.1 1 s, 10 s DC T = 25 °C BVDSS Limited C Single Pulse 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified GS GS DS(on)
Safe Operating Area
www.vishay.com Document Number: 67343 4 S11-0239-Rev. A, 14-Feb-11
