Datasheet MBR140SF, NRVB140SF (ON Semiconductor) - 4
| Manufacturer | ON Semiconductor |
| Description | Schottky Power Rectifier Schottky Power Rectifier |
| Pages / Page | 5 / 4 — MBR140SF, NRVB140SF. Figure 7. Capacitance. Figure 8. Typical Operating … |
| Revision | 6 |
| File Format / Size | PDF / 67 Kb |
| Document Language | English |
MBR140SF, NRVB140SF. Figure 7. Capacitance. Figure 8. Typical Operating Temperature. Derating*. Figure 9. Thermal Response
Model Line for this Datasheet
Text Version of Document
MBR140SF, NRVB140SF
1000 125 RqJA = 25.6°C/W 115 130°C/W T TING J = 25°C °C) 105 324.9°C/W 95 ANCE (pF) TURE ( 100 TED OPERA 85 ACIT 235°C/W 75 , DERA TEMPERA C, CAP JT 65 10 55 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 V V R, REVERSE VOLTAGE (VOLTS) R, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re- verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 1000 ANCE D = 0.5 100 0.2 0.1 0.05 10 P(pk) 0.01 t1 t2 1 DUTY CYCLE, D = t1/t2 SINGLE PULSE Test Type > Min Pad < Die Size 38x38 @ 75% mils qJA = 321.8 °C/W 0.1 r(t), TRANSIENT THERMAL RESIST 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec)
Figure 9. Thermal Response http://onsemi.com 4
1000 125 RqJA = 25.6°C/W 115 130°C/W T TING J = 25°C °C) 105 324.9°C/W 95 ANCE (pF) TURE ( 100 TED OPERA 85 ACIT 235°C/W 75 , DERA TEMPERA C, CAP JT 65 10 55 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 V V R, REVERSE VOLTAGE (VOLTS) R, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re- verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 1000 ANCE D = 0.5 100 0.2 0.1 0.05 10 P(pk) 0.01 t1 t2 1 DUTY CYCLE, D = t1/t2 SINGLE PULSE Test Type > Min Pad < Die Size 38x38 @ 75% mils qJA = 321.8 °C/W 0.1 r(t), TRANSIENT THERMAL RESIST 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec)
Figure 9. Thermal Response http://onsemi.com 4
