Datasheet PMV20EN (Nexperia)
| Manufacturer | Nexperia |
| Description | 30 V, N-channel Trench MOSFET |
| Pages / Page | 15 / 1 — PMV20EN. 30 V, N-channel Trench MOSFET. 5 July 2018. Product data sheet. … |
| Revision | 05072018 |
| File Format / Size | PDF / 324 Kb |
| Document Language | English |
PMV20EN. 30 V, N-channel Trench MOSFET. 5 July 2018. Product data sheet. 1. General description. 2. Features and benefits
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PMV20EN 30 V, N-channel Trench MOSFET 5 July 2018 Product data sheet 1. General description
N-channel enhancement mode Field-Ef ect Transistor (FET) in a smal SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Logic level compatible • Very fast switching • Trench MOSFET technology • Enhanced power dissipation capability of 1200 mW
3. Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - - 7.6 A
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 6 A; Tj = 25 °C - 17 21 mΩ resistance [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents
PMV20EN 30 V, N-channel Trench MOSFET 5 July 2018 Product data sheet 1. General description
N-channel enhancement mode Field-Ef ect Transistor (FET) in a smal SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Logic level compatible • Very fast switching • Trench MOSFET technology • Enhanced power dissipation capability of 1200 mW
3. Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - - 7.6 A
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 6 A; Tj = 25 °C - 17 21 mΩ resistance [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents
