Datasheet PMV20EN (Nexperia) - 8
| Manufacturer | Nexperia |
| Description | 30 V, N-channel Trench MOSFET |
| Pages / Page | 15 / 8 — Nexperia. PMV20EN. 30 V, N-channel Trench MOSFET. Fig. 10. Transfer … |
| Revision | 05072018 |
| File Format / Size | PDF / 324 Kb |
| Document Language | English |
Nexperia. PMV20EN. 30 V, N-channel Trench MOSFET. Fig. 10. Transfer characteristics: drain current as a
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Nexperia PMV20EN 30 V, N-channel Trench MOSFET
017aaa548 30 017aaa549 1.8 ID a (A) 20 1.4 10 1.0 Tj = 150 °C Tj = 25 °C 0 0.6 0 1 2 3 4 -60 0 60 120 180 VGS (V) Tj (°C) VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values
017aaa560 2.5 017aaa550 103 VGS(th) (V) 2.0 C max iss C (pF) 1.5 typ 102 Coss 1.0 min Crss 0.5 0.0 10 -60 0 60 120 180 10-1 1 102 10 Tj (°C) VDS (V) ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances junction temperature as a function of drain-source voltage; typical values
PMV20EN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. Al rights reserved
Product data sheet 5 July 2018 8 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents
017aaa548 30 017aaa549 1.8 ID a (A) 20 1.4 10 1.0 Tj = 150 °C Tj = 25 °C 0 0.6 0 1 2 3 4 -60 0 60 120 180 VGS (V) Tj (°C) VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values
017aaa560 2.5 017aaa550 103 VGS(th) (V) 2.0 C max iss C (pF) 1.5 typ 102 Coss 1.0 min Crss 0.5 0.0 10 -60 0 60 120 180 10-1 1 102 10 Tj (°C) VDS (V) ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances junction temperature as a function of drain-source voltage; typical values
PMV20EN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. Al rights reserved
Product data sheet 5 July 2018 8 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents
