Preliminary Datasheet ZHB6790 (Diodes) - 5

ManufacturerDiodes
DescriptionSM-8 Bipolar Transistor H-Bridge
Pages / Page8 / 5 — ZHB6790. PNP. TRANSISTOR. TYPICAL. CHARACTERISTICS. 1.8. 1.8. IC/IB=100. …
File Format / SizePDF / 203 Kb
Document LanguageEnglish

ZHB6790. PNP. TRANSISTOR. TYPICAL. CHARACTERISTICS. 1.8. 1.8. IC/IB=100. Tamb=25°C. -55°C. IC/IB=100. 1.6. +25°C. IC/IB=40. 1.6. +100°C. IC/IB=10. 1.4. 1.4

ZHB6790 PNP TRANSISTOR TYPICAL CHARACTERISTICS 1.8 1.8 IC/IB=100 Tamb=25°C -55°C IC/IB=100 1.6 +25°C IC/IB=40 1.6 +100°C IC/IB=10 1.4 1.4

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ZHB6790 PNP TRANSISTOR TYPICAL CHARACTERISTICS 1.8 1.8 IC/IB=100 Tamb=25°C -55°C IC/IB=100 1.6 +25°C IC/IB=40 1.6 +100°C IC/IB=10 1.4 1.4 lts) 1.2 ts) 1.2 o ol (V 1.0 V 1.0 - (- 0.8 0.8 0.6 0.6 V 0.4 V 0.4 0.2 0.2 0 0 0.01 0.1 1 10 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC +100°C -55°C VCE=2V 1.6 I +25°C 1.6 +25°C C/IB=100 -55°C 750 +100°C 1.4 n 1.4 in 1.2 ts) 1.2 Gai 1.0 l ol d Ga 500 1.0 e ca s i 0.8 - (V 0.8 ali ypT 0.6 rm - 250 0.6 0.4 No h 0.4 - V 0.2 0.2 h 0 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -55°C VCE=2V 1.6 +25°C +100°C 1.4 1.2 ts) ol 1.0 V (- 0.8 0.6 V 0.4 0.2 0 0 0.01 0.1 1 10 IC - Collector Current (Amps) VBE(on) v IC