Datasheet PMEG120G30ELP (Nexperia) - 3

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Nexperia PMEG120G30ELP 120 V, 3 A Silicon Germanium (SiGe) rectifier 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from in free air [1] - - 200 K/W junction to ambient [2] - - 120 K/W Rth(j-sp) thermal resistance from [3] - - 12 K/W junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Soldering point of cathode tab. aaa-031257 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.50 0.33 0.25 0.20 0.10 10 0.05 0.02 0.01 0 110-3 10-2 10-1 1 102 103 10 tp (s) FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-031258 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.50 0.33 0.25 0.20 10 0.10 0.05 0.02 0.01 0 110-3 10-2 10-1 1 102 103 10 tp (s) FR4 PCB, mounting pad for cathode 1 cm2
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG120G30ELP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. Al rights reserved
Product data sheet 26 May 2020 3 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Mounting 15. Revision history 16. Legal information Contents