Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS2N2906 2N2907TO-18 Metal Can PackageSwitching and Linear ApplicationABSOLUTE MAXIMUM RATINGS DESCRIPTIONSYMBOLVALUEUNITCollector Emitter Voltage VCEO 40 V Collector Base Voltage VCBO 60 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 600 mA Power Dissipation @ Ta=25ºC PD 400 mW Derate Above 25ºC 2.28 mW/ ºC Power Dissipation @ Tc=25ºC PD 1.8 W Derate Above 25ºC 10.3 mW/ ºC Operating and Storage Junction T - 65 to +200 ºC Temperature Range j, Tstg ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTIONSYMBOLTEST CONDITIONMINTYPMAXUNITCollector Emitter Voltage *VCEO IC=10mA, IB=0 40 V Collector Base Voltage VCBO IC=10µA, IE=0 60 V Emitter Base Voltage VEBO IE=10µA, IC=0 5 V Collector Cut Off Current ICEX VCE=30V, VBE=0.5V 50 nA Collector Cut Off Current ICBO VCB=50V, IE=0 20 nA VCB=50V, IE=0, 20 µA Ta=150ºC Base Current IB VCE=30V, VBE=0.5V 50 nA 2N29062N2907DC Current Gain hFE IC=0.1mA, VCE=10V >20 >35 IC=1mA, VCE=10V >25 >50 IC=10mA, VCE=10V >35 >75 *IC=150mA, VCE=10V 40 - 120 100 - 300 *IC=500mA, VCE=10V >20 >30 *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 1 of 4