Datasheet FS8205 (Fortune Semiconductor) - 4

FS8205 6. Thermal Data
Symbol Parameter Rthj-a 7. Value Thermal Resistance Junction-ambient3 Max. Unit 125 ℃/W Electrical Characteristics Electrical Characteristics @Tj = 25℃ ( unless otherwise specified )
Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RT
P
r R ro U
ef pe NE
er rti
’
en es
ce
O
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y Static Characteristics Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 20 -V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA -0.1 -V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS = 4.5V, ID = 4A -23 28 mΩ VGS = 2.5V, ID = 3A -30 37 mΩ VGS(th)
IDSS
IGSS 8. Gate Threshold Voltage VDS = VGS, ID = 250uA 0.45 -1.2 V Drain-Source Leakage Current (Tj = 25℃) VDS =16V, VGS = 0V -1 uA Drain-Source Leakage Current (Tj = 70℃) VDS =16V, VGS = 0V -25 uA Gate-Source Leakage VGS = ±10V -±0.1 uA Min.
-Typ.
-Max.
0.83
1.2 Units
A
V Source-Drain Diode Parameter Continuous Source Current (Body Diode) Forward On Voltage2 Test Conditions
VD = VG = 0V, VS = 1.2V
Tj = 25℃, IS = 1.25A, VGS = 0V FO Symbol
IS
VSD Notes： Fo 1. Pulse width limited by Max. junction temperature.
2. Pulse width ≦ 300us, duty cycle ≦ 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board；208℃/W when mounted on Min. copper
pad. Rev. 1.9 4/4