Datasheet XPN3R804NC (Toshiba) - 3

XPN3R804NC 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V   ±10 µA Drain cut-off current IDSS VDS = 40 V, VGS = 0 V   10 Drain-source breakdown voltage V(BR)DSS ID = 10 mA, VGS = 0 V 40   V V(BR)DSX ID = 10 mA, VGS = -20 V 20   Gate threshold voltage Vth VDS = 10 V, ID = 0.3 mA 1.5  2.5 Drain-source on-resistance RDS(ON) VGS = 4.5 V, ID = 20 A  4.8 7.8 mΩ VGS = 10 V, ID = 20 A  3.0 3.8 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Input capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz  2230  pF Reverse transfer capacitance Crss  110  Output capacitance Coss  1250  Gate resistance rg  2.4  Ω Switching time (rise time) tr See Fig. 6.2.1  17  ns Switching time (turn-on time) ton  38  Switching time (fall time) tf  17  Switching time (turn-off time) toff  66  ns VDD ≈ 20 V VGS = 0 V/ 10 V ID = 20 A RL = 1.0 Ω RGG = 4.7 Ω RGS = 4.7 Ω Duty ≤ 1 %, tw = 10 µs Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Total gate charge (gate-source plus Qg VDD ≈ 32 V, VGS = 10 V, ID = 40 A  35  nC gate-drain) Gate-source charge 1 Qgs1  8  Gate-drain charge Qgd  7.2  6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse drain current (pulsed) (Note 6) IDRP    80 A Diode forward voltage VDSF IDR = 40 A, VGS = 0 V   -1.2 V Note 6: Ensure that the channel temperature does not exceed 175 . ©2018-2020 3 2020-06-24 Toshiba Electronic Devices & Storage Corporation Rev.4.0