Datasheet PE43614 (pSemi)

ManufacturerpSemi
DescriptionUltraCMOS RF Digital Step Attenuator, 9 kHz–45 GHz
Pages / Page23 / 1 — PE43614. Document Category:. Product Specification UltraCMOS® RF Digital …
File Format / SizePDF / 1.2 Mb
Document LanguageEnglish

PE43614. Document Category:. Product Specification UltraCMOS® RF Digital Step Attenuator, 9 kHz–45 GHz. Features

Datasheet PE43614 pSemi

Model Line for this Datasheet

Text Version of Document

PE43614 Document Category: Product Specification UltraCMOS® RF Digital Step Attenuator, 9 kHz–45 GHz Features Figure 1 • PE43614 Functional Diagram
• Wideband support from 9 kHz to 45 GHz • Glitch-safe attenuation state transitions Switched Attenuator Array • Flexible attenuation steps of 0.5 dB and 1 dB up to RF RF Input Output 31.5 dB • +105 °C operating temperature • Paral el and serial programming interfaces with serial addressability • High HBM ESD of 1 kV • Packaging – 24-lead 4 x 4 mm LGA Parallel Control
Applications 6-bit
• Test and measurement (T&M) Serial In Control Logic Interface Serial Out • Point-to-point communication systems • Very smal aperture terminals (VSAT) CLK LE (optional) A0 A1 A2 P/S V V DD SS_EXT
Product Description
The PE43614 is a 50Ω, HaRP™ technology-enhanced, 6-bit RF digital step attenuator (DSA) that supports a wide frequency range from 9 kHz to 45 GHz. The PE43614 features glitch-safe attenuation state transitions, supports 1.8V control voltage and optional VSS_EXT bypass mode to improve spurious performance, making this device ideal for test and measurement, point-to-point communication systems, and very smal aperture terminals (VSAT). The PE43614 provides an integrated digital control interface that supports both serial addressable and paral el programming of the attenuation. The PE43614 covers a 31.5 dB attenuation range in 0.5 dB and 1 dB steps. It is capable of maintaining 0.5 dB and 1 dB monotonicity through 45 GHz. In addition, no external blocking capac- itors are required if 0 VDC is present on the RF ports. The PE43614 is manufactured on pSemi’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology. ©2019–2020, pSemi Corporation. Al rights reserved. • Headquarters: 9369 Carrol Park Drive, San Diego, CA, 92121 Product Specification DOC-93670-2 – (06/2020) www.psemi.com Document Outline Features Applications Product Description Optional External VSS Control Absolute Maximum Ratings ESD Precautions Latch-up Immunity Recommended Operating Conditions Electrical Specifications Switching Frequency Spur-free Performance Glitch-safe Attenuation State The PE43614 features a novel architecture to provide safe transition behavior when changing attenuation states. When RF input power is applied, positive output power spikes are prevented during attenuation state changes by optimized internal timing c... Truth Tables Serial Addressable Register Map Programming Options Parallel/Serial Selection Parallel Mode Interface For direct parallel programming, the LE line should be pulled HIGH. Changing attenuation state control values changes the device state to new attenuation. Direct mode is ideal for manual control of the device (using hardwire, switches, or jumpers). Serial-Addressable Interface Power-up Control Settings Typical Performance Data Pin Configuration Packaging Information Moisture Sensitivity Level Package Drawing Top-Marking Specification Tape and Reel Specification Ordering Information