1N4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching DiodesFEATURES • Silicon epitaxial planar diode • Low forward voltage drop • AEC-Q101 qualified • High forward current capability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONSDESIGN SUPPORT TOOLS click logo to get started • High speed switch and general purpose use in computer and industrial applications Models Available MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PARTORDERING CODETYPE MARKINGCIRCUIT CONFIGURATIONREMARKS 1N4150 1N4150TR or 1N4150TAP 1N4150 Single Tape and reel / ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETERTEST CONDITIONSYMBOLVALUEUNIT Repetitive peak reverse voltage VRRM 50 V Reverse voltage VR 50 V Peak forward surge current tp = 1 μs IFSM 4 A Average peak forward current IFRM 600 mA Forward continuous current IF 300 mA Average forward current VR = 0 IF(AV) 150 mA l = 4 mm, TL = 45 °C Ptot 440 mW Power dissipation l = 4 mm, TL ≤ 25 °C Ptot 500 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETERTEST CONDITIONSYMBOLVALUEUNIT Thermal resistance junction to ambient air l = 4 mm, TL = constant RthJA 350 K/W Junction temperature Tj 175 °C Storage temperature range Tstg -65 to +175 °C Rev. 1.9, 06-Jul-17 1 Document Number: 85522 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000