Datasheet FDS6890A (ON Semiconductor) - 4

FDS6890A Typical Characteristics
(continued) 5 3200
)
f = 1 MHz ID = 7.5A
(V
V VGS = 0 V
E
DS = 5V 4 10V
AG
15V
)
2400
T F L p O (
CISS
V
3
E ANC
1600
URCE O
2
CIT A -S P E AT CA
800 1
, G
COSS
GSV
CRSS 0 0 0 6 12 18 24 30 0 4 8 12 16 20
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100 30 RDS(ON) LIMIT 100µs SINGLE PUL SE
)
1ms 25
A
R 10 θ J A =13 5 C/W
(
10ms T A = 2 5 C
NT
100ms 20 ) W 1s (
URRE
R 1 10s E 15 DC W
AIN C
PO VGS = 10V 10
, DR
0.1 SINGLE PULSE
I D
RθJA = 135oC/W 5 TA = 25oC 0.01 0 0. 01 0. 1 0. 5 10 50 100 300 0.1 1 10 100 SINGLE PULSE TI ME (SEC)
VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation.
1 0.5 D = 0 .5 NCE A E T 0.2 0 .2 TIV IS R θ JA ( t ) = r( t) * R θJA S 0.1 0 .1 R θ JA = 135 C/W FEC RE F L E A 0.05 0.0 5 D P(p k) E RM 0.0 2 IZ 0.02 L HE A 0.0 1 t T 1 M 0.01 t R 2 NT S i n g l e P u l s e O IE 0.005 T - T = P * R (t) J A θJA ), N NS r (t RA D u t y C y c l e, D = t 1 /t 2 0.002 T 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 t , TIME (s ec) 1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. www.onsemi.com 4