Datasheet PN200A, MMBT200 (ON Semiconductor) - 2

PN200 Thermal Characteristics
Values are at T
A / MMBT200 — PNP Ge
A = 25°C unless otherwise noted.
Max. Symbol Parameter Unit PN200A
(3)
MMBT200
(4) Total Device Dissipation 625 350 mW PD Derate Above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
Notes:
3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
neral-
4. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
Pur Electrical Characteristics p
Values are at TA = 25°C unless otherwise noted.
ose Am Symbol Parameter Conditions Min. Max. Unit Off Characteristics
BV
plif
CBO Collector-Base Breakdown Voltage IC = -10 μA, IB = 0 -60 V Collector-Emitter Breakdown
ier
BVCEO Voltage(5) IC = -1.0 mA, IE = 0 -45 V BVEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -6.0 V ICBO Collector Cut-Off Current VCB = -50 V, IE = 0 -50 nA ICES Collector Cut-Off Current VCE = -40 V, IE = 0 -50 nA IEBO Emitter Cut-Off Current VEB = -4.0 V, IC = 0 -50 nA
On Characteristics
I MMBT200 80 C = -100 μA, VCE = -1.0 V PN200A 240 I MMBT200 100 450 C = -10 mA, VCE = -1.0 V PN200A 300 600 hFE DC Current Gain IC = -100 mA, VCE = -1.0 V(5) PN200A 100 I MMBT200 100 350 C = -150 mA, VCE = -5.0 V(5) PN200A 100 Collector-Emitter Saturation IC = -10 mA, IB = -1.0 mA -0.2 VCE(sat) V Voltage IC = -200 mA, IB = -20 mA(5) -0.4 Base-Emitter Saturation IC = -10 mA, IB = -1.0 mA -0.85 VBE(sat) V Voltage IC = -200 mA, IB = -20 mA(5) -1.00
Small Signal Characteristics
fT Current Gain - Bandwidth Product VCE = -20 V, IC = -20 mA, 250 MHz Cob Output Capacitance VCB = -10 V, f = -1.0 MHz 6.0 pF I NF Noise Figure C = -100 μA, VCE = -5.0 V, 4.0 dB RG = 2.0 kΩ, f = 1.0 kHz
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. www.onsemi.com 2