Datasheet XN02401 (Panasonic)
| Manufacturer | Panasonic |
| Description | Silicon PNP epitaxial planar type |
| Pages / Page | 4 / 1 — XN02401 |
| File Format / Size | PDF / 261 Kb |
| Document Language | English |
XN02401
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Text Version of Document
Composite Transistors
XN02401
(XN2401) Silicon PNP epitaxial planar type Unit: mm For general amplification 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) ■ Features 3 4 5 • Two elements incorporated into one package +0.25 –0.05 +0.2 –0.3 2.8 ±0.2 (Base-coupled transistors) 1.50 5˚ 0.4 • Reduction of the mounting area and assembly cost by one half 2 1 0.30+0.10 –0.05 (0.65) ■ Basic Part Number 10˚ • 2SB0709A (2SB709A) × 2 +0.2 –0.1 +0.3 –0.1 1.1 1.1 ■ Absolute Maximum Ratings Ta = 25°C 0 to 0.1 Parameter Symbol Rating Unit 1: Collector (Tr1) 4: Base Collector-base voltage (Emitter open) V − CBO 60 V 2: Collector (Tr2) 5: Emitter (Tr1) 3: Emitter (Tr2) Collector-emitter voltage (Base open) V − CEO 50 V EIAJ: SC-74A Mini5-G1 Package Emitter-base voltage (Collector open) V − EBO 7 V Marking Symbol: 7R Collector current I − C 100 mA Peak collector current I − CP 200 mA Internal Connection Total power dissipation PT 300 mW 3 4 5 Junction temperature Tj 150 °C Storage temperature T − stg 55 to +150 °C Tr2 Tr1 2 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Maintenance/ Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 V Discontinued Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Maintenance/Discontinued includes following four Product lifecycle stage. Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 −100 µA Forward current transfer ratio hFE VCE = −10 V, IC = −2 mA 160 460 hFE ratio * hFE(Small/ VCE = −10 V, IC = −2 mA 0.50 0.99 Large) (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Collector-emitter saturation voltage VCE(sat) IC = −100 mA, IB = −10 mA − 0.3 − 0.5 V Transition frequency fT VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00041BED 1
XN02401
(XN2401) Silicon PNP epitaxial planar type Unit: mm For general amplification 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) ■ Features 3 4 5 • Two elements incorporated into one package +0.25 –0.05 +0.2 –0.3 2.8 ±0.2 (Base-coupled transistors) 1.50 5˚ 0.4 • Reduction of the mounting area and assembly cost by one half 2 1 0.30+0.10 –0.05 (0.65) ■ Basic Part Number 10˚ • 2SB0709A (2SB709A) × 2 +0.2 –0.1 +0.3 –0.1 1.1 1.1 ■ Absolute Maximum Ratings Ta = 25°C 0 to 0.1 Parameter Symbol Rating Unit 1: Collector (Tr1) 4: Base Collector-base voltage (Emitter open) V − CBO 60 V 2: Collector (Tr2) 5: Emitter (Tr1) 3: Emitter (Tr2) Collector-emitter voltage (Base open) V − CEO 50 V EIAJ: SC-74A Mini5-G1 Package Emitter-base voltage (Collector open) V − EBO 7 V Marking Symbol: 7R Collector current I − C 100 mA Peak collector current I − CP 200 mA Internal Connection Total power dissipation PT 300 mW 3 4 5 Junction temperature Tj 150 °C Storage temperature T − stg 55 to +150 °C Tr2 Tr1 2 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Maintenance/ Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 V Discontinued Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Maintenance/Discontinued includes following four Product lifecycle stage. Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 −100 µA Forward current transfer ratio hFE VCE = −10 V, IC = −2 mA 160 460 hFE ratio * hFE(Small/ VCE = −10 V, IC = −2 mA 0.50 0.99 Large) (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Collector-emitter saturation voltage VCE(sat) IC = −100 mA, IB = −10 mA − 0.3 − 0.5 V Transition frequency fT VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00041BED 1
