Datasheet IRG4PH40UD2-EP (Infineon)
| Manufacturer | Infineon |
| Description | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| Pages / Page | 11 / 1 — Features. Benefits. Applications. TO-247AD. Absolute Maximum Ratings. … |
| Revision | 01_00 |
| File Format / Size | PDF / 242 Kb |
| Document Language | English |
Features. Benefits. Applications. TO-247AD. Absolute Maximum Ratings. Parameter. Max. Units. Thermal / Mechanical Characteristics. Min. Typ
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PD - 95239 IRG4PH40UD2-EP INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE
Features
C UltraFast IGBT optimized for high operating VCES = 1200V frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in VCE(on) typ. = 2.43V G resonant circuits Industry standard TO-247AD package with @VGE = 15V, IC = 21A E extended leads Lead-Free n-channel
Benefits
Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less / no snubbing
Applications
Induction cooking systems Microwave Ovens
TO-247AD
Resonant Circuits
Absolute Maximum Ratings Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 41 A IC @ TC = 100°C Continuous Collector Current 21 I Pulse Collector Currentc CM 82 I Clamped Inductive Load current d LM 82 IF @ Tc = 100°C Diode Continuous Forward Current 10 IFM Diode Maximum Forward Current 40 VGE Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 160 W PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 screw 10 lbfyin (1.1Nym)
Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units
RθJC Junction-to-Case- IGBT ––– ––– 0.77 °C/W RθJC Junction-to-Case- Diode ––– ––– 2.5 RθCS Case-to-Sink, flat, greased surface ––– 0.24 ––– RθJA Junction-to-Ambient, typical socket mount ––– ––– 40 Wt Weight ––– 6 (0.21) ––– g (oz.) www.irf.com 1 7/27/04
Features
C UltraFast IGBT optimized for high operating VCES = 1200V frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in VCE(on) typ. = 2.43V G resonant circuits Industry standard TO-247AD package with @VGE = 15V, IC = 21A E extended leads Lead-Free n-channel
Benefits
Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less / no snubbing
Applications
Induction cooking systems Microwave Ovens
TO-247AD
Resonant Circuits
Absolute Maximum Ratings Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 41 A IC @ TC = 100°C Continuous Collector Current 21 I Pulse Collector Currentc CM 82 I Clamped Inductive Load current d LM 82 IF @ Tc = 100°C Diode Continuous Forward Current 10 IFM Diode Maximum Forward Current 40 VGE Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 160 W PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 screw 10 lbfyin (1.1Nym)
Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units
RθJC Junction-to-Case- IGBT ––– ––– 0.77 °C/W RθJC Junction-to-Case- Diode ––– ––– 2.5 RθCS Case-to-Sink, flat, greased surface ––– 0.24 ––– RθJA Junction-to-Ambient, typical socket mount ––– ––– 40 Wt Weight ––– 6 (0.21) ––– g (oz.) www.irf.com 1 7/27/04
