Datasheet IRG4PH50UDPbF (Infineon) - 2
| Manufacturer | Infineon |
| Description | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| Pages / Page | 11 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| Revision | 01_00 |
| File Format / Size | PDF / 693 Kb |
| Document Language | English |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
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IRG4PH50UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 1200 — — V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.20 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 2.56 3.5 IC = 20A VGE = 15V — 2.78 3.7 IC = 24A — 3.20 — V IC = 45A See Fig. 2, 5 — 2.54 — IC = 24A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance T 23 35 — S VCE = 100V, IC = 24A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 1200V — — 6500 VGE = 0V, VCE = 1200V, TJ = 150°C VFM Diode Forward Voltage Drop — 2.5 3.5 V IC = 16A See Fig. 13 — 2.1 3.0 IC = 16A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 160 250 IC = 24A Qge Gate - Emitter Charge (turn-on) — 27 40 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) — 53 80 VGE = 15V td(on) Turn-On Delay Time — 47 — TJ = 25°C tr Rise Time — 24 — ns IC = 24A, VCC = 800V td(off) Turn-Off Delay Time — 110 170 VGE = 15V, RG = 5.0Ω tf Fall Time — 180 260 Energy losses include "tail" and Eon Turn-On Switching Loss — 2.10 — diode reverse recovery. Eoff Turn-Off Switching Loss — 1.50 — mJ See Fig. 9, 10, 18 Ets Total Switching Loss — 3.60 4.6 td(on) Turn-On Delay Time — 46 — TJ = 150°C, See Fig. 11, 18 tr Rise Time — 27 — ns IC = 24A, VCC = 800V td(off) Turn-Off Delay Time — 240 — VGE = 15V, RG = 5.0Ω tf Fall Time — 330 — Energy losses include "tail" and Ets Total Switching Loss — 6.38 — mJ diode reverse recovery. LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 3600 — VGE = 0V Coes Output Capacitance — 160 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 31 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 90 135 ns TJ = 25°C See Fig. — 164 245 TJ = 125°C 14 IF = 16A Irr Diode Peak Reverse Recovery Current — 5.8 10 A TJ = 25°C See Fig. — 8.3 15 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 260 675 nC TJ = 25°C See Fig. — 680 1838 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 120 — A/µs TJ = 25°C See Fig. During tb — 76 — TJ = 125°C 17 2 www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 1200 — — V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.20 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 2.56 3.5 IC = 20A VGE = 15V — 2.78 3.7 IC = 24A — 3.20 — V IC = 45A See Fig. 2, 5 — 2.54 — IC = 24A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance T 23 35 — S VCE = 100V, IC = 24A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 1200V — — 6500 VGE = 0V, VCE = 1200V, TJ = 150°C VFM Diode Forward Voltage Drop — 2.5 3.5 V IC = 16A See Fig. 13 — 2.1 3.0 IC = 16A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 160 250 IC = 24A Qge Gate - Emitter Charge (turn-on) — 27 40 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) — 53 80 VGE = 15V td(on) Turn-On Delay Time — 47 — TJ = 25°C tr Rise Time — 24 — ns IC = 24A, VCC = 800V td(off) Turn-Off Delay Time — 110 170 VGE = 15V, RG = 5.0Ω tf Fall Time — 180 260 Energy losses include "tail" and Eon Turn-On Switching Loss — 2.10 — diode reverse recovery. Eoff Turn-Off Switching Loss — 1.50 — mJ See Fig. 9, 10, 18 Ets Total Switching Loss — 3.60 4.6 td(on) Turn-On Delay Time — 46 — TJ = 150°C, See Fig. 11, 18 tr Rise Time — 27 — ns IC = 24A, VCC = 800V td(off) Turn-Off Delay Time — 240 — VGE = 15V, RG = 5.0Ω tf Fall Time — 330 — Energy losses include "tail" and Ets Total Switching Loss — 6.38 — mJ diode reverse recovery. LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 3600 — VGE = 0V Coes Output Capacitance — 160 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 31 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 90 135 ns TJ = 25°C See Fig. — 164 245 TJ = 125°C 14 IF = 16A Irr Diode Peak Reverse Recovery Current — 5.8 10 A TJ = 25°C See Fig. — 8.3 15 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 260 675 nC TJ = 25°C See Fig. — 680 1838 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 120 — A/µs TJ = 25°C See Fig. During tb — 76 — TJ = 125°C 17 2 www.irf.com
