Datasheet AUIRL7732S2TR (Infineon) - 5
| Manufacturer | Infineon |
| Description | Automotive Grade. Automotive DirectFET Power MOSFET |
| Pages / Page | 11 / 5 — Fig. 7. Fig 8. Fig 9. Fig 10. Fig 11. Fig 12 |
| File Format / Size | PDF / 437 Kb |
| Document Language | English |
Fig. 7. Fig 8. Fig 9. Fig 10. Fig 11. Fig 12
Model Line for this Datasheet
Text Version of Document
AUIRL7732S2TR 3.0 1000 ) V( e 2.5 ) g A( a t t l n o e V r r 100 dl u 2.0 o C h n s i TJ = -40°C e a r r TJ = 25°C ht D I T e D = 50µA e J = 175°C t 1.5 s a I re G D = 250µA v 10 , e ) I h D = 1.0mA R t ( , S 1.0 ID = 1.0A D G I S V VGS = 0V 0.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ , Temperature ( °C ) VSD, Source-to-Drain Voltage (V)
Fig. 7
Typical Threshold Voltage vs.
Fig 8.
Typical Source-Drain Diode Forward Voltage Junction Temperature 100 100000 VGS = 0V, f = 1 MHZ T C ) J = 25°C iss = Cgs + Cgd, C ds SHORTED S( C rss = Cgd 80 ec C n oss = Cds + Cgd at ) c F u p 10000 d ( n 60 e o c c T n s J = 175°C a n ti a c C r a iss T 40 p d a r C C a , 1000 oss wr C o C F rss , 20 sf VDS = 5.0V G 380µs PULSE WIDTH 0 100 0 20 40 60 80 100 1 10 100 ID,Drain-to-Source Current (A) VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Forward Trans conductance vs. Drain Current
Fig 10.
Typical Capacitance vs. Drain-to-Source Voltage 14.0 I 60 D= 35A ) 12.0 V( V 50 e DS= 32V ga 10.0 V tl DS= 20V ) o A V V DS= 8.0V ( 40 e t c 8.0 n r e u rr o u S- C 30 6.0 ot n - i e a t r a D G 4.0 , 20 , S I D GV 2.0 10 0.0 0 0 10 20 30 40 50 60 25 50 75 100 125 150 175 QG, Total Gate Charge (nC) TC , Case Temperature (°C)
Fig 11.
Typical Gate Charge vs.
Fig 12.
Maximum Drain Current vs. Case Temperature Gate-to-Source Voltage 5 2015-12-11
Fig. 7
Typical Threshold Voltage vs.
Fig 8.
Typical Source-Drain Diode Forward Voltage Junction Temperature 100 100000 VGS = 0V, f = 1 MHZ T C ) J = 25°C iss = Cgs + Cgd, C ds SHORTED S( C rss = Cgd 80 ec C n oss = Cds + Cgd at ) c F u p 10000 d ( n 60 e o c c T n s J = 175°C a n ti a c C r a iss T 40 p d a r C C a , 1000 oss wr C o C F rss , 20 sf VDS = 5.0V G 380µs PULSE WIDTH 0 100 0 20 40 60 80 100 1 10 100 ID,Drain-to-Source Current (A) VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Forward Trans conductance vs. Drain Current
Fig 10.
Typical Capacitance vs. Drain-to-Source Voltage 14.0 I 60 D= 35A ) 12.0 V( V 50 e DS= 32V ga 10.0 V tl DS= 20V ) o A V V DS= 8.0V ( 40 e t c 8.0 n r e u rr o u S- C 30 6.0 ot n - i e a t r a D G 4.0 , 20 , S I D GV 2.0 10 0.0 0 0 10 20 30 40 50 60 25 50 75 100 125 150 175 QG, Total Gate Charge (nC) TC , Case Temperature (°C)
Fig 11.
Typical Gate Charge vs.
Fig 12.
Maximum Drain Current vs. Case Temperature Gate-to-Source Voltage 5 2015-12-11
