Datasheet T3035H-8T (STMicroelectronics) - 5

360° T3035H-8T Characteristics (curves) Figure 8. Relative variation of holding current and Figure 7. Relative variation of gate trigger voltage and latching current versus junction temperature (typical current versus junction temperature (typical values) values)
IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C] IH,IL [Tj] / IH,IL [Tj = 25 °C] 3.0 1.5 2.5 I 2.0 GT Q3 1.0 IL 1.5 IGT Q1-Q2 1.0 VGT Q1-Q2-Q3 0.5 IH 0.5 Tj (°C) Tj (°C) 0.0 0.0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Figure 10. Non repetitive surge peak on-state current for Figure 9. Surge peak on-state current versus number of a sinusoidal pulse with width tp < 10 msNon repetitive cycles surge peak on-state current for a sinusoidal pulse with width tp < 10 ms
ITSM(A) I 300 TSM(A) 10000 dl/dt limitation: 100 A/µs Tj initial = 25 °C 250 t=20ms Non repetitive One cycle 200 Tj initial = 25 °C 1000 150 ITSM 100 100 50 Repetitive Tc = 121°C Number of cycles 0 1 10 100 1000 tp(ms) 10 0.01 0.10 1.00 10.00
Figure 11. Relative variation of static dV/dt immunity Figure 12. Relative variation of critical rate of decrease of versus junction temperature main current versus junction temperature dV/dt [ Tj ] / dV/dt [ Tj = 150 °C ]
(dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C]
4
14
VD = VR = 536 V
13 12
3
11 10 9 8
2
7 6 5
1
4 3 2
Tj(°C)
1
0
Tj(°C) 0
25 50 75 100 125 150
25 50 75 100 125 150
DS12707
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Rev 5 page 5/11
α Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB package information 3 Ordering information Revision history