Datasheet Si4466DY (Vishay) - 3
| Manufacturer | Vishay |
| Description | N-Channel 2.5-V (G-S) MOSFET |
| Pages / Page | 5 / 3 — Si4466DY. TYPICAL CHARACTERISTICS. On-Resistance vs. Drain Current. … |
| File Format / Size | PDF / 85 Kb |
| Document Language | English |
Si4466DY. TYPICAL CHARACTERISTICS. On-Resistance vs. Drain Current. Capacitance. Gate Charge
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Si4466DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 0.020 4000 ) Ω 0.016 3200 ( 0.012 2400 Ciss esistance -R VGS = 2.5 V - On 0.008 1600 Coss - Capacitance (pF) C DS(on)R 0.004 VGS = 4.5 V 800 Crss 0.000 0 0 10 20 30 40 50 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
6 1.6 VDS = 10 V V I GS = 4.5 V D = 13.5 A I 5 D = 13.5 A 1.4 oltage (V) 4 V 1.2 ed) 3 maliz - On-Resistance 1.0 (Nor 2 DS(on) - Gate-to-Source R GS 0.8 V 1 0 0.6 0 10 20 30 40 50 60 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
50 0.05 ) 0.04 Ω TJ = 150 °C ID = 13.5 A 10 0.03 0.02 - On-Resistance ( - Source Current (A) I S DS(on) TJ = 25 °C R 0.01 1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 V V SD - Source-to-Drain Voltage (V) GS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Document Number: 71820 www.vishay.com S09-0767-Rev. F, 04-May-09 3
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 0.020 4000 ) Ω 0.016 3200 ( 0.012 2400 Ciss esistance -R VGS = 2.5 V - On 0.008 1600 Coss - Capacitance (pF) C DS(on)R 0.004 VGS = 4.5 V 800 Crss 0.000 0 0 10 20 30 40 50 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
6 1.6 VDS = 10 V V I GS = 4.5 V D = 13.5 A I 5 D = 13.5 A 1.4 oltage (V) 4 V 1.2 ed) 3 maliz - On-Resistance 1.0 (Nor 2 DS(on) - Gate-to-Source R GS 0.8 V 1 0 0.6 0 10 20 30 40 50 60 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
50 0.05 ) 0.04 Ω TJ = 150 °C ID = 13.5 A 10 0.03 0.02 - On-Resistance ( - Source Current (A) I S DS(on) TJ = 25 °C R 0.01 1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 V V SD - Source-to-Drain Voltage (V) GS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Document Number: 71820 www.vishay.com S09-0767-Rev. F, 04-May-09 3
