Datasheet IRFP450, SiHFP450 (Vishay)
| Manufacturer | Vishay |
| Description | Power MOSFET |
| Pages / Page | 11 / 1 — IRFP450, SiHFP450. Power MOSFET. FEATURES. PRODUCT SUMMARY. RoHS*. … |
| File Format / Size | PDF / 1.6 Mb |
| Document Language | English |
IRFP450, SiHFP450. Power MOSFET. FEATURES. PRODUCT SUMMARY. RoHS*. COMPLIANT. TO-247. DESCRIPTION. ORDERING INFORMATION
Model Line for this Datasheet
Text Version of Document
IRFP450, SiHFP450
Vishay Siliconix
Power MOSFET FEATURES PRODUCT SUMMARY
• Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated Available RDS(on) (Ω) VGS = 10 V 0.40 • Isolated Central Mounting Hole
RoHS*
Qg (Max.) (nC) 150
COMPLIANT
• Fast Switching Qgs (nC) 20 • Ease of Paralleling Qgd (nC) 80 • Simple Drive Requirements Configuration Single • Lead (Pb)-free Available D
TO-247 DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-247 package is preferred for commercial-industrial S applications where higher power levels preclude the use of D G S TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. N-Channel MOSFET It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247 IRFP450PbF Lead (Pb)-free SiHFP450-E3 IRFP450 SnPb SiHFP450
ABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 TC = 25 °C 14 Continuous Drain Current VGS at 10 V ID T A C = 100 °C 8.7 Pulsed Drain Currenta IDM 56 Linear Derating Factor 1.5 W/°C Single Pulse Avalanche Energyb EAS 760 mJ Repetitive Avalanche Currenta IAR 8.7 A Repetitive Avalanche Energya EAR 19 mJ Maximum Power Dissipation TC = 25 °C PD 190 W Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 7.0 mH, RG = 25 Ω, IAS = 14 A (see fig. 12). c. ISD ≤ 14 A, dI/dt ≤ 130 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91233 www.vishay.com S-81271-Rev. A, 16-Jun-08 1
Vishay Siliconix
Power MOSFET FEATURES PRODUCT SUMMARY
• Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated Available RDS(on) (Ω) VGS = 10 V 0.40 • Isolated Central Mounting Hole
RoHS*
Qg (Max.) (nC) 150
COMPLIANT
• Fast Switching Qgs (nC) 20 • Ease of Paralleling Qgd (nC) 80 • Simple Drive Requirements Configuration Single • Lead (Pb)-free Available D
TO-247 DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-247 package is preferred for commercial-industrial S applications where higher power levels preclude the use of D G S TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. N-Channel MOSFET It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247 IRFP450PbF Lead (Pb)-free SiHFP450-E3 IRFP450 SnPb SiHFP450
ABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 TC = 25 °C 14 Continuous Drain Current VGS at 10 V ID T A C = 100 °C 8.7 Pulsed Drain Currenta IDM 56 Linear Derating Factor 1.5 W/°C Single Pulse Avalanche Energyb EAS 760 mJ Repetitive Avalanche Currenta IAR 8.7 A Repetitive Avalanche Energya EAR 19 mJ Maximum Power Dissipation TC = 25 °C PD 190 W Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 7.0 mH, RG = 25 Ω, IAS = 14 A (see fig. 12). c. ISD ≤ 14 A, dI/dt ≤ 130 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91233 www.vishay.com S-81271-Rev. A, 16-Jun-08 1
