Datasheet IRF7822 (International Rectifier)
| Manufacturer | International Rectifier |
| Description | HEXFET Power MOSFET for DC-DC Converters |
| Pages / Page | 6 / 1 — HEXFET® Power MOSFET for DC-DC Converters. Description. IRF7822. Absolute … |
| File Format / Size | PDF / 73 Kb |
| Document Language | English |
HEXFET® Power MOSFET for DC-DC Converters. Description. IRF7822. Absolute Maximum Ratings. Parameter. Symbol. Units
Model Line for this Datasheet
Text Version of Document
PD - 94279 IRF7822
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses A 1 8 • Low Switching Losses S D 2 7 S D
Description
3 6 S D This new device employs advanced HEXFET Power 4 5 MOSFET technology to achieve an unprecedented G D balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high SO-8 T o p V ie w efficiency DC-DC converters that power the latest generation of microprocessors. DEVICE CHARACTERISTICSU The IRF7822 has been optimized for all parameters that are critical in synchronous buck converters including
IRF7822
R , gate charge and Cdv/dt-induced turn-on immunity. DS(on) The IRF7822 offers particulary low R and high Cdv/ R 5.0m DS(on) Ω DS(on) dt immunity for synchronous FET applications. Q 44nC G The package is designed for vapor phase, infra-red, Q 12nC sw convection, or wave soldering techniques. Power Q 27nC dissipation of greater than 3W is possible in a typical oss PCB mount application.
Absolute Maximum Ratings Parameter Symbol IRF7822 Units
Drain-Source Voltage V 30 V DS Gate-Source Voltage V ±12 GS Continuous Drain or Source T = 25°C I 18 A D Current (V ≥ 4.5V) T = 70°C 13 A GS A Pulsed Drain CurrentQ I 150 DM Power Dissipation T = 25°C P 3.1 W A D T = 70°C 3.0 A Junction & Storage Temperature Range T , T –55 to 150 °C J STG Continuous Source Current (Body Diode) I 3.8 A S Pulsed Source CurrentQ I 150 SM
Thermal Resistance Parameter Max. Units
Maximum Junction-to-AmbientS R 40 °C/W θJA Maximum Junction-to-Lead R 20 °C/W θJL www.irf.com 1 07/11/01
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses A 1 8 • Low Switching Losses S D 2 7 S D
Description
3 6 S D This new device employs advanced HEXFET Power 4 5 MOSFET technology to achieve an unprecedented G D balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high SO-8 T o p V ie w efficiency DC-DC converters that power the latest generation of microprocessors. DEVICE CHARACTERISTICSU The IRF7822 has been optimized for all parameters that are critical in synchronous buck converters including
IRF7822
R , gate charge and Cdv/dt-induced turn-on immunity. DS(on) The IRF7822 offers particulary low R and high Cdv/ R 5.0m DS(on) Ω DS(on) dt immunity for synchronous FET applications. Q 44nC G The package is designed for vapor phase, infra-red, Q 12nC sw convection, or wave soldering techniques. Power Q 27nC dissipation of greater than 3W is possible in a typical oss PCB mount application.
Absolute Maximum Ratings Parameter Symbol IRF7822 Units
Drain-Source Voltage V 30 V DS Gate-Source Voltage V ±12 GS Continuous Drain or Source T = 25°C I 18 A D Current (V ≥ 4.5V) T = 70°C 13 A GS A Pulsed Drain CurrentQ I 150 DM Power Dissipation T = 25°C P 3.1 W A D T = 70°C 3.0 A Junction & Storage Temperature Range T , T –55 to 150 °C J STG Continuous Source Current (Body Diode) I 3.8 A S Pulsed Source CurrentQ I 150 SM
Thermal Resistance Parameter Max. Units
Maximum Junction-to-AmbientS R 40 °C/W θJA Maximum Junction-to-Lead R 20 °C/W θJL www.irf.com 1 07/11/01
