Datasheet IRF7389PbF (Infineon)
| Manufacturer | Infineon |
| Description | HEXFET Power MOSFET |
| Pages / Page | 10 / 1 — N-Ch P-Ch. Description. Absolute Maximum Ratings. ( TA = 25°C Unless … |
| File Format / Size | PDF / 265 Kb |
| Document Language | English |
N-Ch P-Ch. Description. Absolute Maximum Ratings. ( TA = 25°C Unless Otherwise Noted). Symbol Maximum. Units
Model Line for this Datasheet
Text Version of Document
PD - 95462 IRF7389PbF HEXFET® Power MOSFET l Generation V Technology N-CHANNEL MOSFET
N-Ch P-Ch
l Ultra Low On-Resistance S1 1 8 D1 l Complimentary Half Bridge G1 2 7 D1 l Surface Mount VDSS 30V -30V S2 3 6 D2 l Fully Avalanche Rated G2 4 5 D2 l Lead-Free P-CHANNEL MOSFET RDS(on) 0.029Ω 0.058Ω Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, SO-8 multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol Maximum Units
N-Channel P-Channel Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ± 20 TA = 25°C 7.3 -5.3 Continuous Drain Current I T D A = 70°C 5.9 -4.2 A Pulsed Drain Current IDM 30 -30 Continuous Source Current (Diode Conduction) IS 2.5 -2.5 TA = 25°C 2.5 Maximum Power Dissipation P T D W A = 70°C 1.6 Single Pulse Avalanche Energy EAS 82 140 mJ Avalanche Current IAR 4.0 -2.8 A Repetitive Avalanche Energy EAR 0.20 mJ Peak Diode Recovery dv/dt dv/dt 3.8 -2.2 V/ ns Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C
Thermal Resistance Ratings Parameter Symbol Limit Units
Maximum Junction-to-Ambient RθJA 50 °C/W www.irf.com 1 6/29/04
N-Ch P-Ch
l Ultra Low On-Resistance S1 1 8 D1 l Complimentary Half Bridge G1 2 7 D1 l Surface Mount VDSS 30V -30V S2 3 6 D2 l Fully Avalanche Rated G2 4 5 D2 l Lead-Free P-CHANNEL MOSFET RDS(on) 0.029Ω 0.058Ω Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, SO-8 multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol Maximum Units
N-Channel P-Channel Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ± 20 TA = 25°C 7.3 -5.3 Continuous Drain Current I T D A = 70°C 5.9 -4.2 A Pulsed Drain Current IDM 30 -30 Continuous Source Current (Diode Conduction) IS 2.5 -2.5 TA = 25°C 2.5 Maximum Power Dissipation P T D W A = 70°C 1.6 Single Pulse Avalanche Energy EAS 82 140 mJ Avalanche Current IAR 4.0 -2.8 A Repetitive Avalanche Energy EAR 0.20 mJ Peak Diode Recovery dv/dt dv/dt 3.8 -2.2 V/ ns Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C
Thermal Resistance Ratings Parameter Symbol Limit Units
Maximum Junction-to-Ambient RθJA 50 °C/W www.irf.com 1 6/29/04
