Datasheet HMC1022ACHIPS (Analog Devices)
| Manufacturer | Analog Devices |
| Description | GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 48 GHz |
| Pages / Page | 17 / 1 — GaAs, pHEMT, MMIC, 0.25 W Power. Amplifier, DC to 48 GHz. Data Sheet. … |
| File Format / Size | PDF / 452 Kb |
| Document Language | English |
GaAs, pHEMT, MMIC, 0.25 W Power. Amplifier, DC to 48 GHz. Data Sheet. HMC1022ACHIPS. FEATURES. FUNCTIONAL BLOCK DIAGRAM
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Text Version of Document
GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 48 GHz Data Sheet HMC1022ACHIPS FEATURES FUNCTIONAL BLOCK DIAGRAM 1 2 P1dB: 25 dBm (typical) at dc to 30 GHz frequency range CG CG A A PSAT: 26 dBm (typical) at dc to 30 GHz frequency range 3 4 Gain: 11.5 dB (typical) HMC1022ACHIPS Output IP3: 33 dBm (typical) at dc to 30 GHz frequency range GND Supply voltage: 10 V at 150 mA 5 RFOUT/VDD 50 Ω matched I/O GND Die size: 2.89 mm × 1.48 mm × 0.1 mm APPLICATIONS VGG2 2 Military and space GND Test instrumentation 1 RFIN GND 8 7 6 4 D 3
001 3-
GG1 CG CG V GN A A
1713 Figure 1.
GENERAL DESCRIPTION
The HMC1022ACHIPS is a gallium arsenide (GaAs), HMC1022ACHIPS ideal for military, space, and test equipment pseudomorphic high electron mobility transistor (pHEMT), applications. The HMC1022ACHIPS also features monolithic microwave integrated circuit (MMIC), distributed inputs/outputs (I/Os) that are internally matched to 50 Ω, power amplifier that operates from dc to 48 GHz. The amplifier facilitating integration into multichip modules (MCMs). All data provides 11.5 dB of small signal gain, 0.25 W (25 dBm) output is taken with the chip connected via 0.075 mm × 0.025 mm power at 1 dB gain compression (P1dB), and a typical output (3 mil × 1 mil) ribbon bonds with a minimal length of 0.31 mm third-order intercept (IP3) of 33 dBm, while requiring 150 mA (12 mils). from a 10 V supply on the VDD pin. Gain flatness is excellent from dc to 48 GHz at ±0.5 dB typical, making the
Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2019 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline Features Applications Functional Block Diagram General Description Revision History Electrical Specifications DC to 30 GHz Frequency Range 30 GHz to 40 GHz Frequency Range 40 GHz to 48 GHz Frequency Range Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Wire Bonding Outline Dimensions Ordering Guide
001 3-
GG1 CG CG V GN A A
1713 Figure 1.
GENERAL DESCRIPTION
The HMC1022ACHIPS is a gallium arsenide (GaAs), HMC1022ACHIPS ideal for military, space, and test equipment pseudomorphic high electron mobility transistor (pHEMT), applications. The HMC1022ACHIPS also features monolithic microwave integrated circuit (MMIC), distributed inputs/outputs (I/Os) that are internally matched to 50 Ω, power amplifier that operates from dc to 48 GHz. The amplifier facilitating integration into multichip modules (MCMs). All data provides 11.5 dB of small signal gain, 0.25 W (25 dBm) output is taken with the chip connected via 0.075 mm × 0.025 mm power at 1 dB gain compression (P1dB), and a typical output (3 mil × 1 mil) ribbon bonds with a minimal length of 0.31 mm third-order intercept (IP3) of 33 dBm, while requiring 150 mA (12 mils). from a 10 V supply on the VDD pin. Gain flatness is excellent from dc to 48 GHz at ±0.5 dB typical, making the
Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2019 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline Features Applications Functional Block Diagram General Description Revision History Electrical Specifications DC to 30 GHz Frequency Range 30 GHz to 40 GHz Frequency Range 40 GHz to 48 GHz Frequency Range Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Wire Bonding Outline Dimensions Ordering Guide
