Datasheet HMC7543 (Analog Devices)
| Manufacturer | Analog Devices |
| Description | 71 GHz to 76 GHz, E-Band Power Amplifier With Power Detector |
| Pages / Page | 16 / 1 — 71 GHz to 76 GHz, E-Band Power Amplifier. With Power Detector. Data … |
| Revision | A |
| File Format / Size | PDF / 247 Kb |
| Document Language | English |
71 GHz to 76 GHz, E-Band Power Amplifier. With Power Detector. Data Sheet. HMC7543. FEATURES. GENERAL DESCRIPTION
Model Line for this Datasheet
Text Version of Document
71 GHz to 76 GHz, E-Band Power Amplifier With Power Detector Data Sheet HMC7543 FEATURES GENERAL DESCRIPTION Gain: 21.5 dB typical
The HMC7543 is an integrated E-band gallium arsenide
Output power for 1 dB compression (P1dB): 25 dBm typical
(GaAs), pseudomorphic (pHEMT), monolithic microwave
Saturated output power (P ): 26.5 dBm typical SAT
integrated circuit (MMIC), medium power amplifier with a
Output third-order intercept (OIP3): 30 dBm typical
temperature compensated on-chip power detector that operates
Input return loss: 12 dB typical
from 71 GHz to 76 GHz. The HMC7543 provides 21.5 dB of
Output return loss: 12 dB typical
gain, 25 dBm of output power at 1 dB compression, and 26.5 dBm
DC supply: 4 V at 450 mA
of saturated output power at 20% power added efficiency (PAE)
No external matching required
from a 4 V power supply. The HMC7543 exhibits excellent
Die size: 3.599 mm × 1.999 mm × 0.05 mm
linearity and is optimized for E-band communications and high
APPLICATIONS
capacity wireless backhaul radio systems. The amplifier configura- tion and high gain make it an excel ent candidate for last stage
E-band communication systems
signal amplification before the antenna. Al data is taken with
High capacity wireless backhaul radio systems
the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil
Test and measurement
thick × 7 mil long ribbon on each port.
FUNCTIONAL BLOCK DIAGRAM 4 5 6 7 8 9 10 11 VDD1 VDD2 VDD3 VDD4 HMC7543 12 3 RFIN RFOUT 2 13 1 14 VGG1 VGG2 VGG3 VGG4 VREF VDET 25 24 23 22 21 20 19 18 17 16 15
001 13423- Figure 1.
Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2016 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE
The HMC7543 is an integrated E-band gallium arsenide
Output power for 1 dB compression (P1dB): 25 dBm typical
(GaAs), pseudomorphic (pHEMT), monolithic microwave
Saturated output power (P ): 26.5 dBm typical SAT
integrated circuit (MMIC), medium power amplifier with a
Output third-order intercept (OIP3): 30 dBm typical
temperature compensated on-chip power detector that operates
Input return loss: 12 dB typical
from 71 GHz to 76 GHz. The HMC7543 provides 21.5 dB of
Output return loss: 12 dB typical
gain, 25 dBm of output power at 1 dB compression, and 26.5 dBm
DC supply: 4 V at 450 mA
of saturated output power at 20% power added efficiency (PAE)
No external matching required
from a 4 V power supply. The HMC7543 exhibits excellent
Die size: 3.599 mm × 1.999 mm × 0.05 mm
linearity and is optimized for E-band communications and high
APPLICATIONS
capacity wireless backhaul radio systems. The amplifier configura- tion and high gain make it an excel ent candidate for last stage
E-band communication systems
signal amplification before the antenna. Al data is taken with
High capacity wireless backhaul radio systems
the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil
Test and measurement
thick × 7 mil long ribbon on each port.
FUNCTIONAL BLOCK DIAGRAM 4 5 6 7 8 9 10 11 VDD1 VDD2 VDD3 VDD4 HMC7543 12 3 RFIN RFOUT 2 13 1 14 VGG1 VGG2 VGG3 VGG4 VREF VDET 25 24 23 22 21 20 19 18 17 16 15
001 13423- Figure 1.
Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2016 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE
