Datasheet HMC594 (Analog Devices)
| Manufacturer | Analog Devices |
| Description | GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz |
| Pages / Page | 6 / 1 — HMC594. GaAs pHEMT MMIC LOW NOISE. AMPLIFIER, 2 - 4 GHz. Typical … |
| File Format / Size | PDF / 413 Kb |
| Document Language | English |
HMC594. GaAs pHEMT MMIC LOW NOISE. AMPLIFIER, 2 - 4 GHz. Typical Applications. Features. Functional Diagram. General Description
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HMC594
v01.0312
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Typical Applications Features
The HmC594 is ideal for: Gain flatness: ±0.2 dB ip • Fixed Microwave Noise figure: 2.6 dB H • Point-to-Multi-Point Radios Gain: 10 dB • Test & Measurement Equipment oip3: +36 dBm e - C • Radar & Sensors DC supply: +6V @ 100 mA is • Military & Space 50 ohm matched input/output o Die size: 1.32 x 1.21 x 0.10 mm
Functional Diagram General Description
w N The HmC594 is a GaAs pHemT mmiC low Noise lo Amplifier (lNA) chip which operates from 2 to 4 GHz. The HmC594 features extremely flat performance s - characteristics including 10 dB of small signal gain, r 2.6 dB of noise figure and output ip3 of +36 dBm ie across the operating band. This versatile lNA is ideal for hybrid and mCm assemblies due to its compact lif size, consistent output power and DC blocked rf p i/o’s. All data is measured with the chip in a 50 ohm m test fixture connected via one 0.025 mm (1 mil) dia- A meter bondwire of minimal length 0.31 mm (12 mil).
Electrical Specifications, T = +25° C, Vdd= +6V, Idd= 100mA* A
parameter min. Typ. max. Units Frequency Range 2 - 4 GHz Gain 7 10 dB Gain Variation over Temperature 0.015 dB/ °C Noise figure 2.6 3.5 dB input return loss 15 dB output return loss 15 dB output power for 1 dB Compression (p1dB) 18 21 dBm saturated output power (psat) 22 dBm output Third order intercept (ip3) 36 dBm supply Current (idd) 100 130 mA *Adjust Vgg between -1.5V to -0.5V to achieve idd = 100mA Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
v01.0312
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Typical Applications Features
The HmC594 is ideal for: Gain flatness: ±0.2 dB ip • Fixed Microwave Noise figure: 2.6 dB H • Point-to-Multi-Point Radios Gain: 10 dB • Test & Measurement Equipment oip3: +36 dBm e - C • Radar & Sensors DC supply: +6V @ 100 mA is • Military & Space 50 ohm matched input/output o Die size: 1.32 x 1.21 x 0.10 mm
Functional Diagram General Description
w N The HmC594 is a GaAs pHemT mmiC low Noise lo Amplifier (lNA) chip which operates from 2 to 4 GHz. The HmC594 features extremely flat performance s - characteristics including 10 dB of small signal gain, r 2.6 dB of noise figure and output ip3 of +36 dBm ie across the operating band. This versatile lNA is ideal for hybrid and mCm assemblies due to its compact lif size, consistent output power and DC blocked rf p i/o’s. All data is measured with the chip in a 50 ohm m test fixture connected via one 0.025 mm (1 mil) dia- A meter bondwire of minimal length 0.31 mm (12 mil).
Electrical Specifications, T = +25° C, Vdd= +6V, Idd= 100mA* A
parameter min. Typ. max. Units Frequency Range 2 - 4 GHz Gain 7 10 dB Gain Variation over Temperature 0.015 dB/ °C Noise figure 2.6 3.5 dB input return loss 15 dB output return loss 15 dB output power for 1 dB Compression (p1dB) 18 21 dBm saturated output power (psat) 22 dBm output Third order intercept (ip3) 36 dBm supply Current (idd) 100 130 mA *Adjust Vgg between -1.5V to -0.5V to achieve idd = 100mA Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
