Datasheet HMC499 (Analog Devices)
| Manufacturer | Analog Devices |
| Description | GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz |
| Pages / Page | 6 / 1 — HMC499. GaAs PHEMT MMIC MEDIUM. POWER AMPLIFIER, 21 - 32 GHz. Typical … |
| File Format / Size | PDF / 351 Kb |
| Document Language | English |
HMC499. GaAs PHEMT MMIC MEDIUM. POWER AMPLIFIER, 21 - 32 GHz. Typical Applications. Features. Functional Diagram
Model Line for this Datasheet
Text Version of Document
HMC499
v03.0908
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz Typical Applications Features
The HMC499 is ideal for use as a power amplifi er for: Output IP3: +33 dBm • Point-to-Point Radios P1dB: +24 dBm 3 • Point-to-Multi-Point Radios Gain: 16 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output IP Die Size: 2.04 x 1.09 x 0.1 mm H
Functional Diagram General Description
S - C The HMC499 is a high dynamic range GaAs PHEMT R MMIC Medium Power Amplifi er which operates between 21 and 32 GHz. The HMC499 provides IE 16 dB of gain, and an output power of +24 dBm at IF 1 dB compression from a +5V supply voltage. The L HMC499 amplifi er can easily be integrated into Multi- P Chip-Modules (MCMs) due to its small size. All data M is with the chip in a 50 Ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal R A length 0.31mm (12 mils). E W O R & P A E IN
Electrical Specifi cations, T = +25° C, Vdd = 5V, Idd = 200 mA*
L
A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 21.0 - 24.0 24.0 - 28.0 28.0 - 32.0 GHz Gain 13 16 12.5 15.5 12 15 dB Gain Variation Over Temperature 0.03 0.04 0.03 0.04 0.03 0.04 dB/ °C Input Return Loss 10 5 8 dB Output Return Loss 13 12 12 dB Output Power for 1 dB Compression (P1dB) 20 23 20 24 21 24.5 dBm Saturated Output Power (Psat) 24 24.5 25 dBm Output Third Order Intercept (IP3) 30 33 33.5 dBm Noise Figure 6.5 5.0 4.5 dB Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.) 200 200 200 mA * Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical. Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 56
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v03.0908
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz Typical Applications Features
The HMC499 is ideal for use as a power amplifi er for: Output IP3: +33 dBm • Point-to-Point Radios P1dB: +24 dBm 3 • Point-to-Multi-Point Radios Gain: 16 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output IP Die Size: 2.04 x 1.09 x 0.1 mm H
Functional Diagram General Description
S - C The HMC499 is a high dynamic range GaAs PHEMT R MMIC Medium Power Amplifi er which operates between 21 and 32 GHz. The HMC499 provides IE 16 dB of gain, and an output power of +24 dBm at IF 1 dB compression from a +5V supply voltage. The L HMC499 amplifi er can easily be integrated into Multi- P Chip-Modules (MCMs) due to its small size. All data M is with the chip in a 50 Ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal R A length 0.31mm (12 mils). E W O R & P A E IN
Electrical Specifi cations, T = +25° C, Vdd = 5V, Idd = 200 mA*
L
A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 21.0 - 24.0 24.0 - 28.0 28.0 - 32.0 GHz Gain 13 16 12.5 15.5 12 15 dB Gain Variation Over Temperature 0.03 0.04 0.03 0.04 0.03 0.04 dB/ °C Input Return Loss 10 5 8 dB Output Return Loss 13 12 12 dB Output Power for 1 dB Compression (P1dB) 20 23 20 24 21 24.5 dBm Saturated Output Power (Psat) 24 24.5 25 dBm Output Third Order Intercept (IP3) 30 33 33.5 dBm Noise Figure 6.5 5.0 4.5 dB Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.) 200 200 200 mA * Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical. Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 56
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
