Datasheet HMC406MS8G, 406MS8GE (Analog Devices)
| Manufacturer | Analog Devices |
| Description | GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz |
| Pages / Page | 8 / 1 — HMC406MS8G / 406MS8GE. GaAs InGaP HBT MMIC. POWER AMPLIFIER, 5 - 6 GHz. … |
| File Format / Size | PDF / 443 Kb |
| Document Language | English |
HMC406MS8G / 406MS8GE. GaAs InGaP HBT MMIC. POWER AMPLIFIER, 5 - 6 GHz. Typical Applications. Features. Functional Diagram
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Text Version of Document
HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Typical Applications Features
The HmC406ms8G(e) is ideal for: Gain: 17 dB T • WiMAX & WiLAN saturated power: +29 dBm m s • DSRC 38% pAe • Military & Maritime supply Voltage: +5V r - • Private Mobile Radio power Down Capability e • UNII & ISM low external part Count w o p
Functional Diagram General Description
r & The HmC406ms8G(e) is a high efficiency GaAs A inGap Heterojunction Bipolar Transistor (HBT) mmiC e power amplifier which operates between 5 and 6 GHz. The amplifier is packaged in a low cost, surface lin mount 8 leaded package with an exposed base for improved rf and thermal performance. with s - a minimum of external components, the amplifier r provides 17 dB of gain and +29 dBm of saturated ie power at 38% pAe from a +5V supply voltage. Vpd can be used for full power down or rf output power/ lif current control. p m A
Electrical Specifications, T = +25° C, Vs = 5V, Vpd = 5V A
parameter min. Typ. max. min. Typ. max. Units frequency range 5 - 6 5.7 - 5.9 GHz Gain 13 16 21 14 17 21 dB Gain Variation over Temperature 0.03 0.04 0.03 0.04 dB/ °C input return loss 10 11 dB output return loss 8 9 dB output power for 1 dB Compression (p1dB) 21 24 24 27 dBm saturated output power (psat) 27 29 dBm output Third order intercept (ip3) 34 38 34 38 dBm noise figure 6.0 6.0 dB supply Current (icq) Vpd = 0V/5V 0.002 / 300 0.002 / 300 mA Control Current (ipd) Vpd = 5V 7 7 mA switching speed ton, toff 35 35 ns Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
v06.0611
GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Typical Applications Features
The HmC406ms8G(e) is ideal for: Gain: 17 dB T • WiMAX & WiLAN saturated power: +29 dBm m s • DSRC 38% pAe • Military & Maritime supply Voltage: +5V r - • Private Mobile Radio power Down Capability e • UNII & ISM low external part Count w o p
Functional Diagram General Description
r & The HmC406ms8G(e) is a high efficiency GaAs A inGap Heterojunction Bipolar Transistor (HBT) mmiC e power amplifier which operates between 5 and 6 GHz. The amplifier is packaged in a low cost, surface lin mount 8 leaded package with an exposed base for improved rf and thermal performance. with s - a minimum of external components, the amplifier r provides 17 dB of gain and +29 dBm of saturated ie power at 38% pAe from a +5V supply voltage. Vpd can be used for full power down or rf output power/ lif current control. p m A
Electrical Specifications, T = +25° C, Vs = 5V, Vpd = 5V A
parameter min. Typ. max. min. Typ. max. Units frequency range 5 - 6 5.7 - 5.9 GHz Gain 13 16 21 14 17 21 dB Gain Variation over Temperature 0.03 0.04 0.03 0.04 dB/ °C input return loss 10 11 dB output return loss 8 9 dB output power for 1 dB Compression (p1dB) 21 24 24 27 dBm saturated output power (psat) 27 29 dBm output Third order intercept (ip3) 34 38 34 38 dBm noise figure 6.0 6.0 dB supply Current (icq) Vpd = 0V/5V 0.002 / 300 0.002 / 300 mA Control Current (ipd) Vpd = 5V 7 7 mA switching speed ton, toff 35 35 ns Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
