Datasheet HMC8410 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | 0.01 GHz to 10 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier |
| Pages / Page | 17 / 3 — Data Sheet. HMC8410. ELECTRICAL SPECIFICATIONS 0.01 GHz TO 3 GHz … |
| Revision | D |
| File Format / Size | PDF / 684 Kb |
| Document Language | English |
Data Sheet. HMC8410. ELECTRICAL SPECIFICATIONS 0.01 GHz TO 3 GHz FREQUENCY RANGE. Table 1. Parameter. Symbol. Min. Typ. Max. Unit
Model Line for this Datasheet
Text Version of Document
Data Sheet HMC8410 ELECTRICAL SPECIFICATIONS 0.01 GHz TO 3 GHz FREQUENCY RANGE
TA = 25°C, VDD = 5 V, and IDQ = 65 mA, unless otherwise noted.
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 0.01 3 GHz GAIN 17.5 19.5 dB Gain Variation Over Temperature 0.01 dB/°C NOISE FIGURE 1.1 1.6 dB 0.3 GHz to 3 GHz RETURN LOSS Input 15 dB Output 24 dB OUTPUT Output Power for 1 dB Compression P1dB 19.0 21.0 dBm Saturated Output Power PSAT 22.5 dBm Output Third-Order Intercept IP3 33 dBm SUPPLY CURRENT IDQ 65 80 mA Adjust VGG1 to achieve IDQ = 65 mA typical SUPPLY VOLTAGE VDD 2 5 6 V
3 GHz TO 8 GHz FREQUENCY RANGE
TA = 25°C, VDD = 5 V, and IDQ = 65 mA, unless otherwise noted.
Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 3 8 GHz GAIN 15.5 18 dB Gain Variation Over Temperature 0.01 dB/°C NOISE FIGURE 1.4 1.9 dB RETURN LOSS Input 10 dB Output 16 dB OUTPUT Output Power for 1 dB Compression P1dB 18.0 21.0 dBm Saturated Output Power PSAT 22.5 dBm Output Third-Order Intercept IP3 31.5 dBm SUPPLY CURRENT IDQ 65 80 mA Adjust VGG1 to achieve IDQ = 65 mA typical SUPPLY VOLTAGE VDD 2 5 6 V Rev. D | Page 3 of 17 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY ELECTRICAL SPECIFICATIONS 0.01 GHz TO 3 GHz FREQUENCY RANGE 3 GHz TO 8 GHz FREQUENCY RANGE 8 GHz TO 10 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING During Power-Up During Power-Down TYPICAL APPLICATION CIRCUIT EVALUATION BOARD EVALUATION BOARD SCHEMATIC OUTLINE DIMENSIONS ORDERING GUIDE
TA = 25°C, VDD = 5 V, and IDQ = 65 mA, unless otherwise noted.
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 0.01 3 GHz GAIN 17.5 19.5 dB Gain Variation Over Temperature 0.01 dB/°C NOISE FIGURE 1.1 1.6 dB 0.3 GHz to 3 GHz RETURN LOSS Input 15 dB Output 24 dB OUTPUT Output Power for 1 dB Compression P1dB 19.0 21.0 dBm Saturated Output Power PSAT 22.5 dBm Output Third-Order Intercept IP3 33 dBm SUPPLY CURRENT IDQ 65 80 mA Adjust VGG1 to achieve IDQ = 65 mA typical SUPPLY VOLTAGE VDD 2 5 6 V
3 GHz TO 8 GHz FREQUENCY RANGE
TA = 25°C, VDD = 5 V, and IDQ = 65 mA, unless otherwise noted.
Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 3 8 GHz GAIN 15.5 18 dB Gain Variation Over Temperature 0.01 dB/°C NOISE FIGURE 1.4 1.9 dB RETURN LOSS Input 10 dB Output 16 dB OUTPUT Output Power for 1 dB Compression P1dB 18.0 21.0 dBm Saturated Output Power PSAT 22.5 dBm Output Third-Order Intercept IP3 31.5 dBm SUPPLY CURRENT IDQ 65 80 mA Adjust VGG1 to achieve IDQ = 65 mA typical SUPPLY VOLTAGE VDD 2 5 6 V Rev. D | Page 3 of 17 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY ELECTRICAL SPECIFICATIONS 0.01 GHz TO 3 GHz FREQUENCY RANGE 3 GHz TO 8 GHz FREQUENCY RANGE 8 GHz TO 10 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING During Power-Up During Power-Down TYPICAL APPLICATION CIRCUIT EVALUATION BOARD EVALUATION BOARD SCHEMATIC OUTLINE DIMENSIONS ORDERING GUIDE
