Datasheet HMC1126 (Analog Devices) - 6
| Manufacturer | Analog Devices |
| Description | GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz |
| Pages / Page | 16 / 6 — HMC1126. Data Sheet. PIN CONFIGURATION AND FUNCTION DESCRIPTIONS. VDD. … |
| Revision | C |
| File Format / Size | PDF / 333 Kb |
| Document Language | English |
HMC1126. Data Sheet. PIN CONFIGURATION AND FUNCTION DESCRIPTIONS. VDD. RFOUT. TOP VIEW. (Not to Scale). RFIN. VGG1. VGG2
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HMC1126 Data Sheet PIN CONFIGURATION AND FUNCTION DESCRIPTIONS VDD 2 3 RFOUT HMC1126 TOP VIEW (Not to Scale) RFIN 1 5 4
002
VGG1 VGG2
13083- Figure 2. Pad Configuration
Table 6. Pad Function Descriptions Pad No. Mnemonic Description
1 RFIN RF Input. This pin is ac-coupled and matched to 50 Ω. 2 VDD Power Supply Voltage with Integrated RF Choke. Connect dc bias to this pin to provide drain current (IDD). 3 RFOUT RF Output. This pin is ac-coupled and matched to 50 Ω. 4 VGG2 Gate Control 2 for Amplifier. Attach bypass capacitors as shown in Figure 38. For nominal operation, apply 1.4 V to VGG2. 5 VGG1 Gate Control 1 for Amplifier. Attach bypass capacitors as shown in Figure 38. Adjust this pin to achieve IDD = 65 mA. Die Bottom GND Die bottom must be connected to RF/dc ground. Rev. C | Page 6 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY ELECTRICAL SPECIFICATIONS 2 GHz TO 10 GHz FREQUENCY RANGE 10 GHz TO 26 GHz FREQUENCY RANGE 26 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions Mounting Wire Bonding APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
HMC1126 Data Sheet PIN CONFIGURATION AND FUNCTION DESCRIPTIONS VDD 2 3 RFOUT HMC1126 TOP VIEW (Not to Scale) RFIN 1 5 4
002
VGG1 VGG2
13083- Figure 2. Pad Configuration
Table 6. Pad Function Descriptions Pad No. Mnemonic Description
1 RFIN RF Input. This pin is ac-coupled and matched to 50 Ω. 2 VDD Power Supply Voltage with Integrated RF Choke. Connect dc bias to this pin to provide drain current (IDD). 3 RFOUT RF Output. This pin is ac-coupled and matched to 50 Ω. 4 VGG2 Gate Control 2 for Amplifier. Attach bypass capacitors as shown in Figure 38. For nominal operation, apply 1.4 V to VGG2. 5 VGG1 Gate Control 1 for Amplifier. Attach bypass capacitors as shown in Figure 38. Adjust this pin to achieve IDD = 65 mA. Die Bottom GND Die bottom must be connected to RF/dc ground. Rev. C | Page 6 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY ELECTRICAL SPECIFICATIONS 2 GHz TO 10 GHz FREQUENCY RANGE 10 GHz TO 26 GHz FREQUENCY RANGE 26 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions Mounting Wire Bonding APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
