Datasheet HMC-ALH508 (Analog Devices)
| Manufacturer | Analog Devices |
| Description | GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz |
| Pages / Page | 6 / 1 — HMC-ALH508. GaAs HEMT LOW NOISE. AMPLIFIER, 71 - 86 GHz. Typical … |
| File Format / Size | PDF / 338 Kb |
| Document Language | English |
HMC-ALH508. GaAs HEMT LOW NOISE. AMPLIFIER, 71 - 86 GHz. Typical Applications. Features. Functional Diagram. General Description
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Text Version of Document
HMC-ALH508
v02.0209
GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz
1
Typical Applications Features
This hmC-Alh508 is ideal for: noise figure: <5 dB ip • short haul / high Capacity links p1dB: +7 dBm h • wireless lAns Gain: 13 dB • Automotive radar supply Voltage: +2.4V e - C • military & space 50 ohm matched input/output is • e-Band Communication systems Die size: 3.2 x 1.6 x 0.1 mm o w n o
Functional Diagram General Description
The hmC-Alh508 is a three stage GaAs hemT mmiC low noise Amplifier (lnA) which operates between s - l 71 and 86 Ghz. The hmC-Alh508 features 13 dB r of small signal gain, 4.5 dB of noise figure and an ie output power of +7 dBm at 1dB compression from two supply voltages at 2.1V and 2.4V respectively. lif All bond pads and the die backside are Ti/Au p metal ized and the amplifier device is ful y pass- m ivated for reliable operation. This versatile lnA is A compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for mCm and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 ohm environment and contacted with rf probes.
Electrical Specifications [1], T = +25° C A Vdd1=Vdd2 = 2.1V, Vdd3=2.4V, Idd1+Idd2+Idd3 = 30 mA [2]
parameter min. Typ. max. Units frequency range 71 - 86 Ghz Gain 11 13 dB noise figure 4.5 dB input return loss 8 dB output return loss 10 dB output power for 1 dB Compression (p1dB) 7 dBm Total supply Current (idd1+idd2+idd3) 30 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V )to achieve iddtotal = 30 mA Infor F m o ati ro p n f ruirc n e ish ,e d d e b l y iv Anealroyg a D n evidc ets oi s pblealic ev e e d otr o d b e e ras cc: urH at it e taitne d M relia ic bler. ow Ho a we vve er , C n o o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rporation, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1 - 1
Phone: 978-250-3343 Fax: 978-250-3373 rights of third parties that may result from its use. Specifications subject to change without notice. No O Ph rod n e e r : 7On 81- - 3 li 2 n 9-e 4 a 70t ww 0 • O w rd . e hi r ott nliite n .c e a o t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 pli co atri o ap n S p ups@ por h t it : Ptit hoen.c e o : 1 m -800-ANALOG-D
v02.0209
GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz
1
Typical Applications Features
This hmC-Alh508 is ideal for: noise figure: <5 dB ip • short haul / high Capacity links p1dB: +7 dBm h • wireless lAns Gain: 13 dB • Automotive radar supply Voltage: +2.4V e - C • military & space 50 ohm matched input/output is • e-Band Communication systems Die size: 3.2 x 1.6 x 0.1 mm o w n o
Functional Diagram General Description
The hmC-Alh508 is a three stage GaAs hemT mmiC low noise Amplifier (lnA) which operates between s - l 71 and 86 Ghz. The hmC-Alh508 features 13 dB r of small signal gain, 4.5 dB of noise figure and an ie output power of +7 dBm at 1dB compression from two supply voltages at 2.1V and 2.4V respectively. lif All bond pads and the die backside are Ti/Au p metal ized and the amplifier device is ful y pass- m ivated for reliable operation. This versatile lnA is A compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for mCm and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 ohm environment and contacted with rf probes.
Electrical Specifications [1], T = +25° C A Vdd1=Vdd2 = 2.1V, Vdd3=2.4V, Idd1+Idd2+Idd3 = 30 mA [2]
parameter min. Typ. max. Units frequency range 71 - 86 Ghz Gain 11 13 dB noise figure 4.5 dB input return loss 8 dB output return loss 10 dB output power for 1 dB Compression (p1dB) 7 dBm Total supply Current (idd1+idd2+idd3) 30 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V )to achieve iddtotal = 30 mA Infor F m o ati ro p n f ruirc n e ish ,e d d e b l y iv Anealroyg a D n evidc ets oi s pblealic ev e e d otr o d b e e ras cc: urH at it e taitne d M relia ic bler. ow Ho a we vve er , C n o o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rporation, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1 - 1
Phone: 978-250-3343 Fax: 978-250-3373 rights of third parties that may result from its use. Specifications subject to change without notice. No O Ph rod n e e r : 7On 81- - 3 li 2 n 9-e 4 a 70t ww 0 • O w rd . e hi r ott nliite n .c e a o t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 pli co atri o ap n S p ups@ por h t it : Ptit hoen.c e o : 1 m -800-ANALOG-D
