Datasheet HMC-ALH509 (Analog Devices) - 3

HMC-ALH509
v05.0713
GaAs HEMT LOW NOISE AMPLIFIER 71 - 86 GHz Absolute Maximum Ratings
Drain Bias Voltage +3 Vdc ip Gate Bias Voltage -0.8 to +0.2 Vdc eleCTrOsTATiC seNsiTiVe DeViCe H rf input power 0 dBm OBserVe HANDliNG preCAUTiONs Thermal resistance C 123 °C/W (channel to die bottom) - storage Temperature -65 to +150 °C s Operating Temperature -55 to +85 °C r ie lif p m A
Outline Drawing
NOTes:
Die Packaging Information
[1] 1. All DimeNsiONs Are iN iNCHes [mm]. standard Alternate 2. TYpiCAl BOND pAD is .004” sQUAre. 3. BACKsiDe meTAlliZATiON: GOlD. Gp-1 (Gel pack) [2] 4. BACKsiDe meTAl is GrOUND. [1] Refer to the “Packaging Information” section for die 5. BOND pAD meTAlliZATiON: GOlD. packaging dimensions. 6. CONNeCTiON NOT reQUireD fOr UNlABeleD BOND pADs. [2] For alternate packaging information contact Hittite 7. OVerAll Die siZe ±.002” Microwave Corporation. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
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