Datasheet HMC-ALH444 (Analog Devices)

ManufacturerAnalog Devices
DescriptionGaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz
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HMC-ALH444. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 1 - 12 GHz. Typical Applications. Features. Functional Diagram

Datasheet HMC-ALH444 Analog Devices

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HMC-ALH444
v04.0417
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz
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Typical Applications Features
This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz IP H • Wideband Communication Systems Gain: 17 dB • Surveil ance Systems P1dB Output Power: +19 dBm @ 5 GHz • Point-to-Point Radios Supply Voltage: +5V @ 55 mA E - C • Point-to-Multi-Point Radios Die Size: 2.64 x 1.64 x 0.1 mm IS • Military & Space O • Test Instrumentation * VSAT W N O S - L
Functional Diagram General Description
R The HMC-ALH444 is a GaAs MMIC HEMT Low Noise IE Wideband Amplifier die which operates between 1 LIF and 12 GHz. The amplifier provides 17 dB of gain, 1.5 P dB noise figure and +19 dBm of output power at 1 dB M gain compression while requiring only 55 mA from a A +5V supply voltage.
Electrical Specifications*, T = +25° C, Vdd= +5V A
Parameter Min. Typ. Max. Units Frequency Range 1 - 12 GHz Gain 15 17 dB Gain Variation over Temperature 0.02 dB / °C Noise Figure 1.5 2 dB Input Return Loss 10 dB Output Return Loss 14 dB Output IP3 28 dBm Output Power for 1 dB Compression 19 dBm Supply Current (Idd) 55 mA (Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ) *Unless otherwise indicated, all measurements are from probed die InF foo r r p mati r o ic n fe u , d rnis e heliv d e b r y yA, a nal n o d t g D o p evic l e a s c i e o s belird ev e e r d st: A o b n e a aclo cug D rate e a v n ic d r e el s ia , I bl n e c . H., O owevn e e T r, n e o ch Fn oolo r p g ri y W ce a , d y el , P ive .rO y . B , an ox 9 d t 10 o pl 6 a , N c o e or rw de o rsod : A, M nal A 0 o 2 g D 0 e 6 vi 2 c - e 9 s 10 , In6 c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
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