Datasheet HMC-ALH435 (Analog Devices) - 6
| Manufacturer | Analog Devices |
| Description | GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz |
| Pages / Page | 6 / 6 — HMC-ALH435. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 5 - 20 GHz. Mounting … |
| File Format / Size | PDF / 296 Kb |
| Document Language | English |
HMC-ALH435. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 5 - 20 GHz. Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
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HMC-ALH435
v03.1009
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with 0.102mm (0.004”) Thick GaAs MMIC conductive epoxy (see HMC general Handling, Mounting, Bonding Note). IP 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina Wire Bond H 0.076mm thin fi lm substrates are recommended for bringing RF to and from the chip (0.003”) (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be C used, the die should be raised 0.150mm (6 mils) so that the surface of - the die is coplanar with the surface of the substrate. One way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) RF Ground Plane RS thick molybdenum heat spreader (moly-tab) which is then attached to the IE ground plane (Figure 2). IF Microstrip substrates should be placed as close to the die as possible in 0.127mm (0.005”) Thick Alumina L order to minimize bond wire length. Typical die-to-substrate spacing is Thin Film Substrate P 0.076mm to 0.152 mm (3 to 6 mils). Figure 1. M
Handling Precautions
A Follow these precautions to avoid permanent damage. 0.102mm (0.004”) Thick GaAs MMIC E
Storage:
All bare die are placed in either Waffle or Gel based ESD protec- Wire Bond IS tive containers, and then sealed in an ESD protective bag for shipment. 0.076mm Once the sealed ESD protective bag has been opened, all die should be (0.003”) O stored in a dry nitrogen environment. N
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt W to clean the chip using liquid cleaning systems. RF Ground Plane O
Static Sensitivity:
Follow ESD precautions to protect against ESD L strikes. 0.150mm (0.005”) Thick Moly Tab
Transients:
Suppress instrument and bias supply transients while bias 0.254mm (0.010”) Thick Alumina is applied. Use shielded signal and bias cables to minimize inductive Thin Film Substrate pick-up. Figure 2.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and fl at. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
1 - 185
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
v03.1009
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with 0.102mm (0.004”) Thick GaAs MMIC conductive epoxy (see HMC general Handling, Mounting, Bonding Note). IP 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina Wire Bond H 0.076mm thin fi lm substrates are recommended for bringing RF to and from the chip (0.003”) (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be C used, the die should be raised 0.150mm (6 mils) so that the surface of - the die is coplanar with the surface of the substrate. One way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) RF Ground Plane RS thick molybdenum heat spreader (moly-tab) which is then attached to the IE ground plane (Figure 2). IF Microstrip substrates should be placed as close to the die as possible in 0.127mm (0.005”) Thick Alumina L order to minimize bond wire length. Typical die-to-substrate spacing is Thin Film Substrate P 0.076mm to 0.152 mm (3 to 6 mils). Figure 1. M
Handling Precautions
A Follow these precautions to avoid permanent damage. 0.102mm (0.004”) Thick GaAs MMIC E
Storage:
All bare die are placed in either Waffle or Gel based ESD protec- Wire Bond IS tive containers, and then sealed in an ESD protective bag for shipment. 0.076mm Once the sealed ESD protective bag has been opened, all die should be (0.003”) O stored in a dry nitrogen environment. N
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt W to clean the chip using liquid cleaning systems. RF Ground Plane O
Static Sensitivity:
Follow ESD precautions to protect against ESD L strikes. 0.150mm (0.005”) Thick Moly Tab
Transients:
Suppress instrument and bias supply transients while bias 0.254mm (0.010”) Thick Alumina is applied. Use shielded signal and bias cables to minimize inductive Thin Film Substrate pick-up. Figure 2.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and fl at. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
1 - 185
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
