Datasheet HMC606 (Analog Devices)
| Manufacturer | Analog Devices |
| Description | GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz |
| Pages / Page | 7 / 1 — HMC606. GaAs InGaP HBT MMIC ULTRA LOW. PHASE NOISE, DISTRIBUTED … |
| File Format / Size | PDF / 678 Kb |
| Document Language | English |
HMC606. GaAs InGaP HBT MMIC ULTRA LOW. PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz. Typical Applications. Features
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HMC606
v04.0118
GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Typical Applications Features
The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz IP • Radar, EW & ECM P1dB Output Power: +15 dBm H • Microwave Radio Gain: 14 dB C • Test Instrumentation Output IP3: +27 dBm - S • Military & Space Supply Voltage: +5V @ 64 mA R • Fiber Optic Systems 50 Ohm Matched Input/Output IE Die Size: 2.80 x 1.73 x 0.1 mm LIF P
Functional Diagram General Description
M The HMC606 is a GaAs InGaP HBT MMIC Distributed A Amplifier die which operates between 2 and 18 GHz. E With an input signal of 12 GHz, the amplifier provides IS ultra low phase noise performance of -160 dBc/Hz at O 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606 N provides 14 dB of small signal gain, +27 dBm output W IP3 and +15 dBm of output power at 1 dB gain com- pression while requiring 64 mA from a +5V supply. LO The HMC606 amplifier I/Os are internal y matched to 50 Ohms facilitating easy integration into Multi-Chip- Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1mil) diam- eter wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specifications, T = +25° C, Vcc1= Vcc2= 5V A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2 - 12 12 - 18 GHz Gain 11 14.0 10 13 dB Gain Flatness ±1.0 ±1.0 dB Gain Variation Over Temperature 0.021 0.25 dB/ °C Noise Figure 4.5 6.5 dB Input Return Loss 20 22 dB Output Return Loss 15 15 dB Output Power for 1 dB Compression (P1dB) 12 15 10 13 dBm Saturated Output Power (Psat) 18 15 dBm Output Third Order Intercept (IP3) 27 22 dBm Phase Noise @ 100 Hz -140 -140 dBc/Hz Phase Noise @ 1 kHz -150 -150 dBc/Hz Phase Noise @ 10 kHz -160 -160 dBc/Hz Phase Noise @ 1 MHz -170 -170 dBc/Hz Supply Current 64 95 64 95 mA Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D
v04.0118
GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Typical Applications Features
The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz IP • Radar, EW & ECM P1dB Output Power: +15 dBm H • Microwave Radio Gain: 14 dB C • Test Instrumentation Output IP3: +27 dBm - S • Military & Space Supply Voltage: +5V @ 64 mA R • Fiber Optic Systems 50 Ohm Matched Input/Output IE Die Size: 2.80 x 1.73 x 0.1 mm LIF P
Functional Diagram General Description
M The HMC606 is a GaAs InGaP HBT MMIC Distributed A Amplifier die which operates between 2 and 18 GHz. E With an input signal of 12 GHz, the amplifier provides IS ultra low phase noise performance of -160 dBc/Hz at O 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606 N provides 14 dB of small signal gain, +27 dBm output W IP3 and +15 dBm of output power at 1 dB gain com- pression while requiring 64 mA from a +5V supply. LO The HMC606 amplifier I/Os are internal y matched to 50 Ohms facilitating easy integration into Multi-Chip- Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1mil) diam- eter wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specifications, T = +25° C, Vcc1= Vcc2= 5V A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2 - 12 12 - 18 GHz Gain 11 14.0 10 13 dB Gain Flatness ±1.0 ±1.0 dB Gain Variation Over Temperature 0.021 0.25 dB/ °C Noise Figure 4.5 6.5 dB Input Return Loss 20 22 dB Output Return Loss 15 15 dB Output Power for 1 dB Compression (P1dB) 12 15 10 13 dBm Saturated Output Power (Psat) 18 15 dBm Output Third Order Intercept (IP3) 27 22 dBm Phase Noise @ 100 Hz -140 -140 dBc/Hz Phase Noise @ 1 kHz -150 -150 dBc/Hz Phase Noise @ 10 kHz -160 -160 dBc/Hz Phase Noise @ 1 MHz -170 -170 dBc/Hz Supply Current 64 95 64 95 mA Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D
