Datasheet HMC376LP3, 376LP3E (Analog Devices)
| Manufacturer | Analog Devices |
| Description | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz |
| Pages / Page | 6 / 1 — HMC376LP3 / 376LP3E. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 700 - 1000 … |
| File Format / Size | PDF / 318 Kb |
| Document Language | English |
HMC376LP3 / 376LP3E. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 700 - 1000 MHz. Typical Applications. Features. Functional Diagram
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HMC376LP3 / 376LP3E
v01.0610
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz
7
Typical Applications Features
T The HMC376LP3 / HMC376LP3E is ideal for: Noise Figure: 0.7 dB • Cellular/3G Infrastructure Output IP3: +36 dBm • Base Stations & Repeaters Gain: 15 dB • CDMA, W-CDMA, & TD-SCDMA Externally Adjustable Supply Current E - SM • Private Land Mobile Radio Single Positive Supply: +5V IS • GSM/GPRS & EDGE 50 Ohm Matched Input/Output • UHF Reallocation Applications W NO
Functional Diagram General Description
O The HMC376LP3 & HMC376LP3E are GaAs PHEMT - L MMIC Low Noise Amplifi ers that are ideal for GSM S & CDMA cellular basestation front-end receivers R operating between 700 and 1000 MHz. The amplifi er has been optimized to provide 0.7 dB noise fi gure, IE 15 dB gain and +36 dBm output IP3 from a single IF L supply of +5V. The HMC376LP3(E) feature an P externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA M A for each application. For applications which require improved noise fi gure, please see the HMC617LP3(E).
Electrical Specifi cations, T = +25° C, Vdd = +5V, Rbias = 10 Ohms* A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 810 - 960 700 - 1000 MHz Gain 12.5 14.5 11.5 14.5 dB Gain Variation Over Temperature 0.005 0.01 0.005 0.01 dB / °C Noise Figure 0.7 1.0 0.7 1.0 dB Input Return Loss 13 14 dB Output Return Loss 12 12 dB Reverse Isolation 20 22 dB Output Power for 1dB Compression (P1dB) 21.5 21 dBm Saturated Output Power (Psat) 22 22 dBm Output Third Order Intercept (IP3) 36 36 dBm (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd) 73 73 mA *Rbias resistor value sets current, see application circuit herein. Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
7 - 1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
v01.0610
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz
7
Typical Applications Features
T The HMC376LP3 / HMC376LP3E is ideal for: Noise Figure: 0.7 dB • Cellular/3G Infrastructure Output IP3: +36 dBm • Base Stations & Repeaters Gain: 15 dB • CDMA, W-CDMA, & TD-SCDMA Externally Adjustable Supply Current E - SM • Private Land Mobile Radio Single Positive Supply: +5V IS • GSM/GPRS & EDGE 50 Ohm Matched Input/Output • UHF Reallocation Applications W NO
Functional Diagram General Description
O The HMC376LP3 & HMC376LP3E are GaAs PHEMT - L MMIC Low Noise Amplifi ers that are ideal for GSM S & CDMA cellular basestation front-end receivers R operating between 700 and 1000 MHz. The amplifi er has been optimized to provide 0.7 dB noise fi gure, IE 15 dB gain and +36 dBm output IP3 from a single IF L supply of +5V. The HMC376LP3(E) feature an P externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA M A for each application. For applications which require improved noise fi gure, please see the HMC617LP3(E).
Electrical Specifi cations, T = +25° C, Vdd = +5V, Rbias = 10 Ohms* A
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 810 - 960 700 - 1000 MHz Gain 12.5 14.5 11.5 14.5 dB Gain Variation Over Temperature 0.005 0.01 0.005 0.01 dB / °C Noise Figure 0.7 1.0 0.7 1.0 dB Input Return Loss 13 14 dB Output Return Loss 12 12 dB Reverse Isolation 20 22 dB Output Power for 1dB Compression (P1dB) 21.5 21 dBm Saturated Output Power (Psat) 22 22 dBm Output Third Order Intercept (IP3) 36 36 dBm (-20 dBm Input Power per tone, 1 MHz tone spacing) Supply Current (Idd) 73 73 mA *Rbias resistor value sets current, see application circuit herein. Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
7 - 1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
