Datasheet HMC998A (Analog Devices)
| Manufacturer | Analog Devices |
| Description | GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, DC -22 GHz |
| Pages / Page | 16 / 1 — HMC998A. GaAs pHEMT MMIC. 2 WATT POWER AMPLIFIER, DC - 22 GHz. Typical … |
| File Format / Size | PDF / 1.0 Mb |
| Document Language | English |
HMC998A. GaAs pHEMT MMIC. 2 WATT POWER AMPLIFIER, DC - 22 GHz. Typical Applications. Features. General Description
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HMC998A
v03.0918
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, DC - 22 GHz Typical Applications Features
The HMC998A is ideal for: High P1dB Output Power: +32.5 dBm IP • Test Instrumentation High Psat Output Power: +33.5 dBm H • Microwave Radio & VSAT High Gain: 14.5 dB • Military & Space High Output IP3: 43 dBm R - C • Telecom Infrastructure Supply Voltage: +15 V @ 500 mA E • Fiber Optics 50 Ohm Matched Input/Output W Die Size: 2.98 x 1.78 x 0.1 mm O
General Description Functional Diagram
The HMC998A is a GaAs MMIC pHEMT Distributed R & P Power Amplifier die which operates between DC and A 3 4 22 GHz. The amplifier provides 14.5 dB of gain, 43 dBm E ACG1 ACG2 output IP3 and +32.5 dBm of output power at 1 dB gain IN VGG2 5 compression while requiring 500 mA quiescent current 2 RFOUT & from a +15 V supply. The HMC998A exhibits a slightly VDD positive gain slope, making it ideal for EW, ECM, Radar S - L and test equipment applications. The HMC998A ampli- R fier I/Os are internal y matched to 50 Ohms facilitating 1 IE RFIN integration into Mutli-Chip-Modules (MCMs). All data ACG4 ACG3 VGG1 8 7 6 is taken with the chip connected via two 0.025 mm LIF (1 mil) wire bonds of minimal length 0.31 mm (12 mils). P M A
Electrical Specifications, T = +25° C, Vdd = +15 V, Idd = 500 mA* A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range DC - 2 2 -18 18 - 22 GHz Gain 13 15 12.5 14.5 12 14 dB Gain Flatness ±0.15 ±0.15 ±0.15 dB Gain Variation Over Temperature .006 .004 .009 dB/ °C Input Return Loss 14 18 15 dB Output Return Loss 13 16 17 dB Output Power for 1 dB Compression (P1dB) 29.5 30.5 32.5 29.5 31.5 dBm Saturated Output Power (Psat) 34 33.5 33 dBm Output Third Order Intercept (IP3) 41 43 41.5 dBm Noise Figure 8 2.5 3 dB Supply Current 500 500 500 mA (Idd) (Vdd= 10V, Vgg1= -0.6V Typ.) Supply Voltage 11 15 15 11 15 15 11 15 15 V * Adjust Vgg1 between -2 to 0 V to achieve Idd = 500 mA typical. Product covered by one or more US and Foreign Patents: US Pat. Nos. 8,786,368; 9,425,752; Patents Pending. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Noise Figure vs. Temperature P1dB vs. Temperature Output IP3 vs. Temperature @ Pout = 16 dBm / Tone Reverse Isolation vs. Temperature Second Harmonics vs. Temperature @ Pout = 14 dBm, Vdd = 10V & Vgg = 3.5V, 175 mA Second Harmonics vs. Vdd @ Pout = 14 dBm, Idd = 175 mA Absolute Maximum Ratings Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
v03.0918
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, DC - 22 GHz Typical Applications Features
The HMC998A is ideal for: High P1dB Output Power: +32.5 dBm IP • Test Instrumentation High Psat Output Power: +33.5 dBm H • Microwave Radio & VSAT High Gain: 14.5 dB • Military & Space High Output IP3: 43 dBm R - C • Telecom Infrastructure Supply Voltage: +15 V @ 500 mA E • Fiber Optics 50 Ohm Matched Input/Output W Die Size: 2.98 x 1.78 x 0.1 mm O
General Description Functional Diagram
The HMC998A is a GaAs MMIC pHEMT Distributed R & P Power Amplifier die which operates between DC and A 3 4 22 GHz. The amplifier provides 14.5 dB of gain, 43 dBm E ACG1 ACG2 output IP3 and +32.5 dBm of output power at 1 dB gain IN VGG2 5 compression while requiring 500 mA quiescent current 2 RFOUT & from a +15 V supply. The HMC998A exhibits a slightly VDD positive gain slope, making it ideal for EW, ECM, Radar S - L and test equipment applications. The HMC998A ampli- R fier I/Os are internal y matched to 50 Ohms facilitating 1 IE RFIN integration into Mutli-Chip-Modules (MCMs). All data ACG4 ACG3 VGG1 8 7 6 is taken with the chip connected via two 0.025 mm LIF (1 mil) wire bonds of minimal length 0.31 mm (12 mils). P M A
Electrical Specifications, T = +25° C, Vdd = +15 V, Idd = 500 mA* A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range DC - 2 2 -18 18 - 22 GHz Gain 13 15 12.5 14.5 12 14 dB Gain Flatness ±0.15 ±0.15 ±0.15 dB Gain Variation Over Temperature .006 .004 .009 dB/ °C Input Return Loss 14 18 15 dB Output Return Loss 13 16 17 dB Output Power for 1 dB Compression (P1dB) 29.5 30.5 32.5 29.5 31.5 dBm Saturated Output Power (Psat) 34 33.5 33 dBm Output Third Order Intercept (IP3) 41 43 41.5 dBm Noise Figure 8 2.5 3 dB Supply Current 500 500 500 mA (Idd) (Vdd= 10V, Vgg1= -0.6V Typ.) Supply Voltage 11 15 15 11 15 15 11 15 15 V * Adjust Vgg1 between -2 to 0 V to achieve Idd = 500 mA typical. Product covered by one or more US and Foreign Patents: US Pat. Nos. 8,786,368; 9,425,752; Patents Pending. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Noise Figure vs. Temperature P1dB vs. Temperature Output IP3 vs. Temperature @ Pout = 16 dBm / Tone Reverse Isolation vs. Temperature Second Harmonics vs. Temperature @ Pout = 14 dBm, Vdd = 10V & Vgg = 3.5V, 175 mA Second Harmonics vs. Vdd @ Pout = 14 dBm, Idd = 175 mA Absolute Maximum Ratings Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
