Datasheet HMC907APM5E (Analog Devices)
| Manufacturer | Analog Devices |
| Description | GaAs pHEMT MMIC Power Amplifier 0.2 - 22 GHz |
| Pages / Page | 12 / 1 — HMC907APM5E. GaAs pHEMT MMIC. POWER AMPLIFIER, 0.2 - 22 GHz. Typical … |
| File Format / Size | PDF / 965 Kb |
| Document Language | English |
HMC907APM5E. GaAs pHEMT MMIC. POWER AMPLIFIER, 0.2 - 22 GHz. Typical Applications. Features. Functional Diagram
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HMC907APM5E
v02.0418
GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Typical Applications Features
The HMC907APM5E is ideal for: High P1dB Output Power: +28 dBm T • Test Instrumentation High Gain: 14 dB M • Military & Space High Output IP3: +40 dBm Single Supply: +10 V @ 350 mA R - S 50 Ohm Matched Input/Output E 32 Lead 5x5 mm SMT Package: 25 mm² W O
Functional Diagram General Description
R & P The HMC907APM5E is a GaAs MMIC pHEMT Distrib- A uted Power Amplifier which operates between 0.2 and E 22 GHz. This self-biased power amplifier provides IN 14 dB of gain, +40 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requir- ing only 350 mA from a +10 V supply. Gain flatness is S - L excel ent at ±0.7 dB from 0.2 to 22 GHz making the R HMC907APM5E ideal for EW, ECM, Radar and test IE equipment applications. The HMC907APM5E ampli- fier I/Os are internal y matched to 50 Ohms facilitat- LIF ing integration into Mutli-Chip-Modules (MCMs) and is P packaged in a leadless QFN 5x5 mm surface mount M package, and requires no external matching compo- A nents.
Electrical Specifications, T = +25° C, Vdd = +10 V, Idd = 350 mA A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 0.2 - 10 10 - 18 18 - 22 GHz Gain 11 13 11 13 12 14 dB Gain Flatness ±0.7 ±0.6 ±0.7 dB Gain Variation Over Temperature 0.01 0.013 0.014 dB/ °C Input Return Loss 15 15 18 dB Output Return Loss 14 16 18 dB Output Power for 1 dB Compression (P1dB) 25 27 25.5 28 24.5 27.5 dBm Saturated Output Power (Psat) 29 28.5 29 dBm Output Third Order Intercept (IP3) 38.5 40 40 dBm Noise Figure 6 3 3.5 dB Quiescent Current (Idq) at (Vdd= 10V) 350 430 350 430 350 430 mA Supply Voltage (Vdd) 8 10 11 8 10 11 8 10 11 V Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Functional Diagram General Description Electrical Specifications Gain & Return Loss Absolute Maximum Ratings Outline Drawing Package Information Pin Descriptions
v02.0418
GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz Typical Applications Features
The HMC907APM5E is ideal for: High P1dB Output Power: +28 dBm T • Test Instrumentation High Gain: 14 dB M • Military & Space High Output IP3: +40 dBm Single Supply: +10 V @ 350 mA R - S 50 Ohm Matched Input/Output E 32 Lead 5x5 mm SMT Package: 25 mm² W O
Functional Diagram General Description
R & P The HMC907APM5E is a GaAs MMIC pHEMT Distrib- A uted Power Amplifier which operates between 0.2 and E 22 GHz. This self-biased power amplifier provides IN 14 dB of gain, +40 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requir- ing only 350 mA from a +10 V supply. Gain flatness is S - L excel ent at ±0.7 dB from 0.2 to 22 GHz making the R HMC907APM5E ideal for EW, ECM, Radar and test IE equipment applications. The HMC907APM5E ampli- fier I/Os are internal y matched to 50 Ohms facilitat- LIF ing integration into Mutli-Chip-Modules (MCMs) and is P packaged in a leadless QFN 5x5 mm surface mount M package, and requires no external matching compo- A nents.
Electrical Specifications, T = +25° C, Vdd = +10 V, Idd = 350 mA A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 0.2 - 10 10 - 18 18 - 22 GHz Gain 11 13 11 13 12 14 dB Gain Flatness ±0.7 ±0.6 ±0.7 dB Gain Variation Over Temperature 0.01 0.013 0.014 dB/ °C Input Return Loss 15 15 18 dB Output Return Loss 14 16 18 dB Output Power for 1 dB Compression (P1dB) 25 27 25.5 28 24.5 27.5 dBm Saturated Output Power (Psat) 29 28.5 29 dBm Output Third Order Intercept (IP3) 38.5 40 40 dBm Noise Figure 6 3 3.5 dB Quiescent Current (Idq) at (Vdd= 10V) 350 430 350 430 350 430 mA Supply Voltage (Vdd) 8 10 11 8 10 11 8 10 11 V Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Functional Diagram General Description Electrical Specifications Gain & Return Loss Absolute Maximum Ratings Outline Drawing Package Information Pin Descriptions
