HMC907APM5E v02.0418 GaAs pHEMT MMICPOWER AMPLIFIER, 0.2 - 22 GHzOIP2 vs. VddSupply Current vs. Supply Voltage@ Pout/tone = +16 dBm T 70 365 M 60 360 50 355 ) m R - S 40 A (dB (m 350 E 2 30 Idd IP +8V +9V W 345 20 +10V +11V O 340 10 0 335 0 4 8 12 16 20 24 8 9 10 11 R & P FREQUENCY (GHz) Vdd (V) A Absolute Maximum RatingsReliability Information E IN Nominal Drain Supply to GND +12.0 V Junction Temperature to Main- 175 °C tain 1 Million Hour MTTF Continuous Pdiss (T= 85 °C) 5.4 W (derate 60 mW/°C above 85 °C) Nominal Junction Temperature 143.45 °C S - L (T=85 °C, Vdd = 10 V) RF Input Power +25 dBm R Thermal Resistance Output Load VSWR 7:1 16.7 °C/W (channel to ground paddle) IE Storage Temperature -65 to 150 °C Operating Temperature -40 to +85 °C Max Peak Reflow Temperature 260 °C LIF ESD Sensitivity (HBM) Class 1A, passed 250V P M ELECTROSTATIC SENSITIVE DEVICE A OBSERVE HANDLING PRECAUTIONS Stresses at or above those listed under Absolute Maxi- mum Ratings may cause permanent damage to the prod- uct. This is a stress rating only, functional operation of the product at these or any other conditions above those indi- cated in the operational section of this specification is not implied. Operation beyond the maximum operating condi- tions for extended periods may affect product reliability. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 9 Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Functional Diagram General Description Electrical Specifications Gain & Return Loss Absolute Maximum Ratings Outline Drawing Package Information Pin Descriptions