Datasheet ADPA7004CHIPS (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | 40 GHz to 80 GHz, GaAs, pHEMT, MMIC, Wideband Power Amplifier |
| Pages / Page | 20 / 3 — Data Sheet. ADPA7004CHIPS. SPECIFICATIONS 40 GHz TO 45 GHz FREQUENCY … |
| File Format / Size | PDF / 465 Kb |
| Document Language | English |
Data Sheet. ADPA7004CHIPS. SPECIFICATIONS 40 GHz TO 45 GHz FREQUENCY RANGE. Table 1. Parameter. Symbol Min Typ. Max Unit
Model Line for this Datasheet
Text Version of Document
Data Sheet ADPA7004CHIPS SPECIFICATIONS 40 GHz TO 45 GHz FREQUENCY RANGE
Die bottom temperature (TDIE BOTTOM) = 25°C, drain bias voltage (VDD) = VDD1A and VDD1B = VDD2A and VDD2B = VDD3A and VDD3B = VDD4A and VDD4B = 3.5 V, and IDQ1x + IDQ2x+ IDQ3x + IDQ4x = 550 mA, unless otherwise noted. Note that IDQ1x, IDQ2x, IDQ3x, and IDQ4x are the IDQ for VDD1x, VDD2x, VDD3x, VDD4x, respectively, where x stands for A and B. Adjust VGG1234A from −1.5 V to 0 V to achieve the desired supply current (IDQ). The typical gate bias voltage (VGG) = −0.4 V for IDQ = 550 mA.
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 40 45 GHz GAIN 17 dB Gain Variation over Temperature 0.023 dB/°C RETURN LOSS Input S11 18 dB Output S22 23 dB OUTPUT Output Power for 1 dB Compression P1dB 21.5 dBm Saturated Output Power PSAT 23.5 dBm Output Third-Order Intercept IP3 30.5 dBm Output power (POUT) per tone = 12 dBm with 1 MHz tone spacing SUPPLY Current IDQ 550 mA Adjust VGG to achieve IDQ = 550 mA typical Voltage VDD 3 3.5 4 V
45 GHz TO 75 GHz FREQUENCY RANGE
TDIE BOTTOM = 25°C, VDD = VDD1A and VDD1B = VDD2A and VDD2B = VDD3A and VDD3B = VDD4A and VDD4B = 3.5 V and IDQ1x + IDQ2x+ IDQ3x + IDQ4x = 550 mA, unless otherwise noted. Adjust VGG1234A from −1.5 V to 0 V to achieve the desired IDQ. The typical VGG = −0.4 V for IDQ = 550 mA.
Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 45 75 GHz GAIN 15 18.5 dB Gain Variation over Temperature 0.023 dB/°C RETURN LOSS Input S11 20.0 dB Output S22 22.0 dB OUTPUT Output Power for 1 dB Compression P1dB 20 22.0 dBm Saturated Output Power PSAT 24.0 dBm Output Third-Order Intercept IP3 31.0 dBm POUT per tone = 12 dBm with 1 MHz tone spacing Current IDQ 550 mA Adjust VGG to achieve IDQ = 550 mA typical Voltage VDD 3 3.5 4 V Rev. 0 | Page 3 of 20 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 40 GHz TO 45 GHz FREQUENCY RANGE 45 GHz TO 75 GHz FREQUENCY RANGE 75 GHz TO 80 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ELECTROSTATIC DISCHARGE (ESD) RATINGS ESD Ratings ADPA7004CHIPS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION POWER-UP AND POWER-DOWN SEQUENCING Power-Up Sequence Power-Down Sequence RF DETECTOR OPERATION ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions Mounting Wire Bonding OUTLINE DIMENSIONS ORDERING GUIDE
Die bottom temperature (TDIE BOTTOM) = 25°C, drain bias voltage (VDD) = VDD1A and VDD1B = VDD2A and VDD2B = VDD3A and VDD3B = VDD4A and VDD4B = 3.5 V, and IDQ1x + IDQ2x+ IDQ3x + IDQ4x = 550 mA, unless otherwise noted. Note that IDQ1x, IDQ2x, IDQ3x, and IDQ4x are the IDQ for VDD1x, VDD2x, VDD3x, VDD4x, respectively, where x stands for A and B. Adjust VGG1234A from −1.5 V to 0 V to achieve the desired supply current (IDQ). The typical gate bias voltage (VGG) = −0.4 V for IDQ = 550 mA.
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 40 45 GHz GAIN 17 dB Gain Variation over Temperature 0.023 dB/°C RETURN LOSS Input S11 18 dB Output S22 23 dB OUTPUT Output Power for 1 dB Compression P1dB 21.5 dBm Saturated Output Power PSAT 23.5 dBm Output Third-Order Intercept IP3 30.5 dBm Output power (POUT) per tone = 12 dBm with 1 MHz tone spacing SUPPLY Current IDQ 550 mA Adjust VGG to achieve IDQ = 550 mA typical Voltage VDD 3 3.5 4 V
45 GHz TO 75 GHz FREQUENCY RANGE
TDIE BOTTOM = 25°C, VDD = VDD1A and VDD1B = VDD2A and VDD2B = VDD3A and VDD3B = VDD4A and VDD4B = 3.5 V and IDQ1x + IDQ2x+ IDQ3x + IDQ4x = 550 mA, unless otherwise noted. Adjust VGG1234A from −1.5 V to 0 V to achieve the desired IDQ. The typical VGG = −0.4 V for IDQ = 550 mA.
Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 45 75 GHz GAIN 15 18.5 dB Gain Variation over Temperature 0.023 dB/°C RETURN LOSS Input S11 20.0 dB Output S22 22.0 dB OUTPUT Output Power for 1 dB Compression P1dB 20 22.0 dBm Saturated Output Power PSAT 24.0 dBm Output Third-Order Intercept IP3 31.0 dBm POUT per tone = 12 dBm with 1 MHz tone spacing Current IDQ 550 mA Adjust VGG to achieve IDQ = 550 mA typical Voltage VDD 3 3.5 4 V Rev. 0 | Page 3 of 20 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 40 GHz TO 45 GHz FREQUENCY RANGE 45 GHz TO 75 GHz FREQUENCY RANGE 75 GHz TO 80 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ELECTROSTATIC DISCHARGE (ESD) RATINGS ESD Ratings ADPA7004CHIPS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION POWER-UP AND POWER-DOWN SEQUENCING Power-Up Sequence Power-Down Sequence RF DETECTOR OPERATION ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions Mounting Wire Bonding OUTLINE DIMENSIONS ORDERING GUIDE
