Datasheet HMC7229LS6 (Analog Devices)
| Manufacturer | Analog Devices |
| Description | GaAs, pHEMT, MMIC, 1 W, Power Amplifier with Power Detector, 37 GHz to 40 GHz |
| Pages / Page | 15 / 1 — GaAs, pHEMT, MMIC, 1 W, Power Amplifier. with Power Detector, 37 GHz to … |
| Revision | E |
| File Format / Size | PDF / 328 Kb |
| Document Language | English |
GaAs, pHEMT, MMIC, 1 W, Power Amplifier. with Power Detector, 37 GHz to 40 GHz. Data Sheet. HMC7229LS6. FEATURES
Model Line for this Datasheet
Text Version of Document
GaAs, pHEMT, MMIC, 1 W, Power Amplifier with Power Detector, 37 GHz to 40 GHz Data Sheet HMC7229LS6 FEATURES FUNCTIONAL BLOCK DIAGRAM 32 dBm typical saturated output power (P HMC7229LS6 SAT) at 18% power added efficiency (PAE) at 39 GHz T F U T D O D P1dB compression output power: 31.5 dBm typical RE N N DE V G RF G V High output third-order intercept (IP3): 40 dBm typical 16 15 14 13 12 High gain: 24 dB typical 50 Ω matched input/output Ceramic, 6 mm × 6 mm, high frequency, air cavity package V 1 11 V APPLICATIONS DD1 DD2 Point to point radios VDD3 2 10 VDD4 Point to multipoint radios Very small aperture terminal (VSAT) and satellite VGG1 3 9 VGG2 communications (SATCOM) 4 5 6 7 8 C D D C PACKAGE IN NI NI BASE GN RF GN GND NOTES 1. NIC = NO INTERNAL CONNECTION. NOTE THAT DATA
001
SHOWN HEREIN WAS MEASURED WITH THESE PINS
37-
EXTERNALLY CONNECTED TO RF/DC GROUND.
133 Figure 1.
GENERAL DESCRIPTION
The HMC7229LS6 is a four stage, gallium arsenide (GaAs), applications such as high capacity, point to point or multipoint pseudomorphic high electron mobility transfer (pHEMT), radios or VSAT/SATCOM applications demanding 32 dBm of monolithic microwave integrated circuit (MMIC), 1 W power efficient saturated output power. The radio frequency (RF) amplifier, with an integrated temperature compensated on-chip input/outputs are internally matched and dc blocked for ease of power detector that operates between 37 GHz to 40 GHz. The integration into higher level assemblies. The HMC7229LS6 is HMC7229LS6 provides 24 dB of gain and 32 dBm of saturated housed in a ceramic, 6 mm × 6 mm, high frequency, air cavity output power at 18% PAE at 39 GHz from a 6 V supply. With package that exhibits low thermal resistance and is compatible an excellent IP3 of 40 dBm, the HMC7229LS6 is ideal for linear with surface-mount manufacturing techniques.
Rev. E Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. No license is granted by implication or otherwise under any patent or patent rights of Analog Tel: 781.329.4700 ©2016–2020 Analog Devices, Inc. All rights reserved. Devices. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCE During Power-Up During Power-Down EVALUATION PRINTED CIRCUIT BOARD (PCB) TYPICAL APPLICATION CIRCUIT OUTLINE DIMENSIONS ORDERING GUIDE
001
SHOWN HEREIN WAS MEASURED WITH THESE PINS
37-
EXTERNALLY CONNECTED TO RF/DC GROUND.
133 Figure 1.
GENERAL DESCRIPTION
The HMC7229LS6 is a four stage, gallium arsenide (GaAs), applications such as high capacity, point to point or multipoint pseudomorphic high electron mobility transfer (pHEMT), radios or VSAT/SATCOM applications demanding 32 dBm of monolithic microwave integrated circuit (MMIC), 1 W power efficient saturated output power. The radio frequency (RF) amplifier, with an integrated temperature compensated on-chip input/outputs are internally matched and dc blocked for ease of power detector that operates between 37 GHz to 40 GHz. The integration into higher level assemblies. The HMC7229LS6 is HMC7229LS6 provides 24 dB of gain and 32 dBm of saturated housed in a ceramic, 6 mm × 6 mm, high frequency, air cavity output power at 18% PAE at 39 GHz from a 6 V supply. With package that exhibits low thermal resistance and is compatible an excellent IP3 of 40 dBm, the HMC7229LS6 is ideal for linear with surface-mount manufacturing techniques.
Rev. E Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. No license is granted by implication or otherwise under any patent or patent rights of Analog Tel: 781.329.4700 ©2016–2020 Analog Devices, Inc. All rights reserved. Devices. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCE During Power-Up During Power-Down EVALUATION PRINTED CIRCUIT BOARD (PCB) TYPICAL APPLICATION CIRCUIT OUTLINE DIMENSIONS ORDERING GUIDE
