Datasheet HMC7229 (Analog Devices)
| Manufacturer | Analog Devices |
| Description | 33 GHz to 40 GHz, GaAs, pHEMT, MMIC, 1 W Power Amplifier with Power Detector |
| Pages / Page | 16 / 1 — 33 GHz to 40 GHz, GaAs, pHEMT, MMIC, 1 W. Power Amplifier with Power … |
| Revision | D |
| File Format / Size | PDF / 310 Kb |
| Document Language | English |
33 GHz to 40 GHz, GaAs, pHEMT, MMIC, 1 W. Power Amplifier with Power Detector. Data Sheet. HMC7229. FEATURES. GENERAL DESCRIPTION
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33 GHz to 40 GHz, GaAs, pHEMT, MMIC, 1 W Power Amplifier with Power Detector Data Sheet HMC7229 FEATURES GENERAL DESCRIPTION 32 dBm PSAT with 22% PAE
The HMC7229 is a four-stage, gallium arsenide (GaAs),
P1dB POUT: 31.5 dBm
pseudomorphic high electron mobility transfer (pHEMT),
High OIP3: 39.5 dBm
monolithic microwave integrated circuit (MMIC), 1 W power
High gain: 24.5 dB
amplifier with an integrated temperature compensated on-chip
50 Ω matched input/output
power detector, operating between 33 GHz and 40 GHz. The
APPLICATIONS
HMC7229 provides a typical range of 23 dB to 24.5 dB of gain and a range of 30 dBm to 32 dBm of saturated output power (PSAT) with
Point to point radios
12% to 22% (typical) power added efficiency (PAE) range across
Point to multipoint radio
a band of 33 GHz to 40 GHz from a 6 V supply. With an excellent
VSAT and SATCOM
OIP3 with a range of 37 dBm to 39.5 dBm across a band of 33 GHz to 40 GHz, the HMC7229 is ideal for linear applications such as high capacity point to point or point to multipoint radios or very small aperture terminal (VSAT)/satel ite communications (SATCOM) applications demanding 32 dBm of efficient saturated output power. The radio frequency (RF) input/output ports are internal y matched and dc blocked for easy integration into higher level assemblies.
FUNCTIONAL BLOCK DIAGRAM V VDD1 V V V GG1 DD2 DD3 DD4 2 3 4 5 6 V 7 REF HMC7229 RFIN 1 8 RFOUT V 9 DET 14 13 12 11 10
001
V V V V GG2 DD5 VDD6 DD7 DD8
14566- Figure 1.
Rev. D Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2016–2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline Features Applications General Description Functional Block Diagram Table of Contents Revision History Specifications 33 GHz to 35 GHz Frequency Range 35 GHz to 37 GHz Frequency Range 37 GHz to 40 GHz Frequency Range Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Typical Application Circuit Mounting and Bonding Techniques for Millimeter Wave GaAs MMICs Handling Precautions Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding Assembly Diagram Outline Dimensions Ordering Guide
The HMC7229 is a four-stage, gallium arsenide (GaAs),
P1dB POUT: 31.5 dBm
pseudomorphic high electron mobility transfer (pHEMT),
High OIP3: 39.5 dBm
monolithic microwave integrated circuit (MMIC), 1 W power
High gain: 24.5 dB
amplifier with an integrated temperature compensated on-chip
50 Ω matched input/output
power detector, operating between 33 GHz and 40 GHz. The
APPLICATIONS
HMC7229 provides a typical range of 23 dB to 24.5 dB of gain and a range of 30 dBm to 32 dBm of saturated output power (PSAT) with
Point to point radios
12% to 22% (typical) power added efficiency (PAE) range across
Point to multipoint radio
a band of 33 GHz to 40 GHz from a 6 V supply. With an excellent
VSAT and SATCOM
OIP3 with a range of 37 dBm to 39.5 dBm across a band of 33 GHz to 40 GHz, the HMC7229 is ideal for linear applications such as high capacity point to point or point to multipoint radios or very small aperture terminal (VSAT)/satel ite communications (SATCOM) applications demanding 32 dBm of efficient saturated output power. The radio frequency (RF) input/output ports are internal y matched and dc blocked for easy integration into higher level assemblies.
FUNCTIONAL BLOCK DIAGRAM V VDD1 V V V GG1 DD2 DD3 DD4 2 3 4 5 6 V 7 REF HMC7229 RFIN 1 8 RFOUT V 9 DET 14 13 12 11 10
001
V V V V GG2 DD5 VDD6 DD7 DD8
14566- Figure 1.
Rev. D Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2016–2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline Features Applications General Description Functional Block Diagram Table of Contents Revision History Specifications 33 GHz to 35 GHz Frequency Range 35 GHz to 37 GHz Frequency Range 37 GHz to 40 GHz Frequency Range Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Typical Application Circuit Mounting and Bonding Techniques for Millimeter Wave GaAs MMICs Handling Precautions Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding Assembly Diagram Outline Dimensions Ordering Guide
