Datasheet HMC1086 (Analog Devices)
| Manufacturer | Analog Devices |
| Description | 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz |
| Pages / Page | 9 / 1 — HMC1086. 25 WATT GAN MMIC POWER AMPLIFIER,. 2 - 6 GHz. Typical … |
| File Format / Size | PDF / 643 Kb |
| Document Language | English |
HMC1086. 25 WATT GAN MMIC POWER AMPLIFIER,. 2 - 6 GHz. Typical Applications. Features. Functional Diagram. General Description
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Text Version of Document
HMC1086
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER, 2 - 6 GHz Typical Applications Features
The HMC1086 is ideal for: High Psat: +44.5 dBm IP • Test Instrumentation Power Gain at Psat: 14 dB H • General Communications High Output IP3: +48 dBm • Radar Small Signal Gain: 22 dB Supply Voltage: +28 V @ 1.1 A R - C E 50 Ohm Matched Input/Output W Die Size: 3.4 x 4 x 0.1 mm2 O
Functional Diagram
R & P
General Description
A The HMC1086 is a 25W Gal ium Nitride (GaN) Power E Amplifier MMIC which operates between 2 and 6 GHz. IN The amplifier typical y provides 22 dB of small signal gain, +44.5 dBm of saturated output power, and +48 dBm output IP3 at +33 dBm output power per S - L tone. The HMC1086 draws 1100 mA quiescent current R from a +28V DC supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into IE Multi-Chip-Modules (MCM). All electrical performance data was acquired with die eutectical y attached to LIF P 1.02 mm (40 mil) thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to M A 50 Ohm transmission lines on alumina.
Electrical Specifications, T = +25 °C, Vdd = VD1 = VD2 = +28V, Idd = 1100 mA [1] A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2 - 3.5 3.5 - 5 5 - 6 GHz Small Signal Gain 21 22 22 23 21 22 dB Gain Flatness ±0.5 ±0.5 ±0.5 dB Gain Variation Over Temperature 0.012 0.016 0.024 dB/
°
C Input Return Loss 10 15 15 dB Output Return Loss 8 8 8 dB Power Gain (Pin @ 25 dBm) 18 18 18 dB Saturated Output Power (Psat) 44.5 45 44.5 dBm Output Third Order Intercept (IP3) [2] 48 48 48 dBm Power Added Efficiency 42 37 34
%
Quiescent Supply Current 1100 1100 1100 mA (Idd @ Vdd = +28V) [1] Assumes eutectic attach of die to a 40 mil CuMo carrier, and 25 °C is maintained at the back of the carrier. [2] Measurement taken at Pout / tone = +33 dBm. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline General Description Gain and Return Loss Gain vs. Vdd Input Return Loss Output Return Loss Pout vs. Frequency Power Gain vs. Frequency Power Added Efficiency vs. Pin Pout vs. Pin Pout vs. Temperature at Pin= 25dBm Pout vs. Vdd at Pin= 25dBm Psat vs. Temperature Psat vs. Vdd Drain Current vs. Pin OIP3 vs Pin/Tone IM3 vs. Pin/Tone Reverse Isolation Power Dissipation vs. Pin Second Harmonic vs. Pin Absolute Maximum Ratings[ Outline Drawing Pad Descriptions Application Circuit Assembly Diagram Mounting & Bonding Techniques for GaN MMICs
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER, 2 - 6 GHz Typical Applications Features
The HMC1086 is ideal for: High Psat: +44.5 dBm IP • Test Instrumentation Power Gain at Psat: 14 dB H • General Communications High Output IP3: +48 dBm • Radar Small Signal Gain: 22 dB Supply Voltage: +28 V @ 1.1 A R - C E 50 Ohm Matched Input/Output W Die Size: 3.4 x 4 x 0.1 mm2 O
Functional Diagram
R & P
General Description
A The HMC1086 is a 25W Gal ium Nitride (GaN) Power E Amplifier MMIC which operates between 2 and 6 GHz. IN The amplifier typical y provides 22 dB of small signal gain, +44.5 dBm of saturated output power, and +48 dBm output IP3 at +33 dBm output power per S - L tone. The HMC1086 draws 1100 mA quiescent current R from a +28V DC supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into IE Multi-Chip-Modules (MCM). All electrical performance data was acquired with die eutectical y attached to LIF P 1.02 mm (40 mil) thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to M A 50 Ohm transmission lines on alumina.
Electrical Specifications, T = +25 °C, Vdd = VD1 = VD2 = +28V, Idd = 1100 mA [1] A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2 - 3.5 3.5 - 5 5 - 6 GHz Small Signal Gain 21 22 22 23 21 22 dB Gain Flatness ±0.5 ±0.5 ±0.5 dB Gain Variation Over Temperature 0.012 0.016 0.024 dB/
°
C Input Return Loss 10 15 15 dB Output Return Loss 8 8 8 dB Power Gain (Pin @ 25 dBm) 18 18 18 dB Saturated Output Power (Psat) 44.5 45 44.5 dBm Output Third Order Intercept (IP3) [2] 48 48 48 dBm Power Added Efficiency 42 37 34
%
Quiescent Supply Current 1100 1100 1100 mA (Idd @ Vdd = +28V) [1] Assumes eutectic attach of die to a 40 mil CuMo carrier, and 25 °C is maintained at the back of the carrier. [2] Measurement taken at Pout / tone = +33 dBm. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline General Description Gain and Return Loss Gain vs. Vdd Input Return Loss Output Return Loss Pout vs. Frequency Power Gain vs. Frequency Power Added Efficiency vs. Pin Pout vs. Pin Pout vs. Temperature at Pin= 25dBm Pout vs. Vdd at Pin= 25dBm Psat vs. Temperature Psat vs. Vdd Drain Current vs. Pin OIP3 vs Pin/Tone IM3 vs. Pin/Tone Reverse Isolation Power Dissipation vs. Pin Second Harmonic vs. Pin Absolute Maximum Ratings[ Outline Drawing Pad Descriptions Application Circuit Assembly Diagram Mounting & Bonding Techniques for GaN MMICs
